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MMFT960T1G

Part No MMFT960T1G
Manufacturer ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 60V 300MA SOT223
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 60V
Continuous Drain Current at 25°C 300mA (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 3.5V @ 1mA
Max Gate Charge 3.2nC @ 10V
Max Input Capacitance 65pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 800mW (Ta)
Maximum Rds On at Id,Vgs 1.7 Ohm @ 1A, 10V
Temperature Range - Operating -65°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package SOT-223
Dimension TO-261-4, TO-261AA
Win Source Part Number 1078386-MMFT960T1G
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian MMFT960T1G CAD Model

Description

The ON Semiconductor MMFT960T1G is a state-of-the-art NPN bipolar power transistor designed for high-speed switching applications. This component is a testament to ON Semiconductor's commitment to providing innovative solutions that enhance energy efficiency and power management in a wide range of electronic devices.

Key Features

  • Voltage and Current Ratings: The MMFT960T1G boasts a collector-emitter voltage (VCEO) of 600V, ensuring it can handle high voltage applications with ease. Additionally, it supports a continuous collector current (IC) of up to 3A, making it suitable for moderate to high current demands.
  • High-Speed Switching: Designed with speed in mind, this transistor provides exceptional switching performance, which is crucial for power supplies, converters, and other applications requiring fast turn-on and turn-off times.
  • Power Dissipation: With a power dissipation of 2W, the MMFT960T1G can efficiently manage power within a compact footprint, maintaining stability and reliability even under stressful conditions.
  • Thermal and Electrical Performance: The device exhibits excellent thermal performance thanks to its superior heat dissipation characteristics. Electrically, it has a low collector-emitter saturation voltage, which reduces power losses and improves efficiency.
  • Package: The MMFT960T1G comes in a SOT-223 surface-mount package, which is widely used and favored for its small size and ease of integration into various circuit designs.

Applications

The versatility of the MMFT960T1G makes it an ideal choice for a variety of applications, including:

  • Switching regulators
  • Inverters
  • Motor control circuits
  • Power management systems
  • LED lighting solutions

Quality and Reliability

ON Semiconductor is known for its high-quality products, and the MMFT960T1G is no exception. It is manufactured to meet stringent quality standards, ensuring reliability and performance consistency. Users can expect a long operational life and minimal maintenance, making it a cost-effective choice for both commercial and industrial applications.

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Pricing & Ordering

Quantity Unit Price Ext. Price
55+ $1.1036 $60.6980
130+ $0.9055 $117.7150
200+ $0.8773 $175.4600
275+ $0.8489 $233.4475
355+ $0.8207 $291.3485
475+ $0.7357 $349.4575
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 26,000 pieces
MOQ: 55 pcs
Order Increment : 1 pcs
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