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MMUN2111LT3G

Part No MMUN2111LT3G
Manufacturer ON Semiconductor
Catalog Transistors (BJT) - Single, Pre - Biased
Description Digital Transistors (BRT) R1 = 10 k, R2 = 10 k | TRANS PREBIAS PNP 246MW SOT23-3
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Reel
Transistor Type PNP - Pre-Biased
Current - Collector (Ic) (Maximum) 100mA
Voltage - Collector Emitter Breakdown (Maximum) 50V
Resistor - Base (R1) 10 kOhms
Resistor - Emitter Base (R2) 10 kOhms
DC Current Gain (hFE) (Minimum) at Ic, Vce 35 at 5mA, 10V
Vce Saturation (Maximum) at Ib, Ic 250mV at 300μA, 10mA
Current - Collector Cutoff (Maximum) 500nA
Maximum Power 246mW
Mounting Style SMD
Manufacturer Package TO-236-3, SC-59, SOT-23-3
Supplier Device Package SOT-23-3 (TO-236)
Family Part Number MMUN21**L
Manufacturer Pack Quantity 1
MSL Level 1 (Unlimited)
Win Source Part Number 725350-MMUN2111LT3G
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian MMUN2111LT3G CAD Model

Description

ON Semiconductor MMUN2111LT3G Bipolar Transistor

The MMUN2111LT3G is a high-quality bipolar junction transistor (BJT) from ON Semiconductor, a renowned manufacturer in the semiconductor industry. This PNP transistor is designed for general-purpose amplification and switching applications, making it a versatile component for a wide range of electronic circuits.

Key Features and Benefits

  • PNP Transistor: The MMUN2111LT3G is a PNP transistor, which means it is designed to allow current flow when a small negative voltage is applied to its base terminal.
  • Surface-Mount Package: This transistor comes in a small SOT-23 package, which is ideal for space-constrained applications. The surface-mount design allows for efficient assembly and saves valuable board space.
  • High Current Gain: With a high current gain (hFE) level, this transistor can amplify weak input signals into stronger output signals, making it suitable for various amplification needs.
  • Low Saturation Voltage: The MMUN2111LT3G exhibits low saturation voltage, reducing power loss and improving efficiency when the transistor is in the "on" state.
  • Energy-Efficient: As part of ON Semiconductor's commitment to energy efficiency, this BJT is designed to operate with minimal power dissipation, contributing to energy-saving in electronic devices.
  • RoHS Compliant: The MMUN2111LT3G is RoHS compliant, meaning it is manufactured without the use of hazardous substances, making it environmentally friendly and safe for use in consumer electronics.

Applications

The MMUN2111LT3G is suitable for a variety of applications, including, but not limited to:

  • Signal amplification in audio devices
  • Power management in portable electronics
  • Switching operations in digital circuits
  • Driver stages in amplifiers and regulators

With its reliable performance and ON Semiconductor's reputation for quality, the MMUN2111LT3G is an excellent choice for designers and engineers looking to incorporate a dependable PNP transistor into their electronic designs.

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Pricing & Ordering

Quantity Unit Price Ext. Price
3,035+ $0.0191 $57.9685
7,355+ $0.0157 $115.4735
11,365+ $0.0152 $172.7480
15,750+ $0.0147 $231.5250
20,330+ $0.0142 $288.6860
27,275+ $0.0127 $346.3925
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 120,000 pieces
MOQ: 3035 pcs
Order Increment : 1 pcs
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