ON Semiconductor MMUN2112LT1G - Bipolar Transistor

The MMUN2112LT1G is a high-quality bipolar junction transistor (BJT) from ON Semiconductor, designed for use in general-purpose amplifier and switching applications. This PNP transistor offers users a compact surface-mount solution with a SOT-23 package, making it ideal for space-constrained applications.

Key Features:

• Device Type: PNP Bipolar Transistor
• Package: SOT-23, a small outline transistor package that is widely used in modern electronic applications for its size efficiency.
• Configuration: Single, providing a simple and straightforward design for ease of integration.
• Collector-Emitter Voltage (VCEO): 50V, offering a robust voltage handling capability for a range of circuits.
• Collector-Base Voltage (VCBO): 60V, ensuring stable operation under high voltage conditions.
• Emitter-Base Voltage (VEBO): 5V, suitable for many standard applications requiring a moderate voltage.
• Collector Current (IC): 100 mA, providing sufficient current handling for small to medium power requirements.
• DC Current Gain (hFE): 100 to 300, indicating efficient current amplification.
• Operating and Storage Junction Temperature Range: -55°C to +150°C, allowing for use in a wide range of environmental conditions.

Applications:

The MMUN2112LT1G is versatile and can be used in various electronic circuits. It is particularly suitable for:

• General-purpose amplification
• Switching applications
• Signal processing
• Power management
• Consumer electronics
• Industrial control systems

ON Semiconductor's commitment to quality ensures that the MMUN2112LT1G transistor meets the stringent requirements of electronic device manufacturers. Whether for prototyping or mass production, this BJT is an excellent choice for designers looking for reliability and performance.