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Same model may have multiple batches, images only for reference.
IPT65R105G7XTMA1
Same model may have multiple batches, images only for reference.

IPT65R105G7XTMA1

Part No IPT65R105G7XTMA1
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 650V 24A 8HSOF / N-Channel 650 V 24A (Tc) 156W (Tc) Surface Mount PG-HSOF-8-2
Datasheet
IPT65R105G7XTMA1 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Manufacturer Infineon Technologies
Packaging Reel - TR
Product Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650 V
Current - Continuous Drain (Id) @ 25°C 24A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 105mOhm @ 8.9A, 10V
Vgs(th) (Max) @ Id 4V @ 440µA
Gate Charge (Qg) (Max) @ Vgs 35 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 1670 pF @ 400 V
Power Dissipation (Max) 156W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Surface Mount
Supplier Device Package PG-HSOF-8-2
Case / Package 8-PowerSFN
Base Product Number IPT65R105
RoHS Status ROHS3 Compliant
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Other Part Number IPT65R105G7XTMA1TR,IPT65R105G7XTMA1-ND,INFINFIPT65R105G7XTMA1,SP001456204,IPT65R105G7XTMA1CT,IPT65R105G7XTMA1DKR,2156-IPT65R105G7XTMA1
Standard Package 2,000
Win Source Part Number 1325384-IPT65R105G7XTMA1
Ultra Librarian 3D Model Ultra Librarian IPT65R105G7XTMA1 CAD Model

Description

The IPT65R105G7XTMA1 is an N-channel enhancement mode MOSFET transistor manufactured by Infineon Technologies.

  • Maximum Vgs: ±20V
  • Maximum Rds On: 105mOhm @ 8.9A and 10V
  • Package: PG-HSOF-8-2
  • ROHS3 Compliant: True
  • REACH Unaffected: True
  • Status: Obsolete

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