ON Semiconductor MMUN2114RLT1 - Bipolar Transistor

The MMUN2114RLT1 from ON Semiconductor is a high-performance bipolar transistor that offers excellent amplification and switching capabilities. Designed with precision and efficiency in mind, this transistor is an ideal choice for a wide range of applications in the electronics industry.

Key Features:

• Device Type: PNP Bipolar Transistor
• Configuration: Single
• Collector-Emitter Voltage (VCEO): 50V
• Collector-Base Voltage (VCBO): 50V
• Emitter-Base Voltage (VEBO): 5V
• Collector Current (IC): 100mA
• Power Dissipation (Pd): 225mW
• DC Current Gain (hFE): 100 to 300 at 10mA, 5V
• Operating and Storage Junction Temperature Range: -55°C to +150°C
• Package / Case: SOT-23-3

The MMUN2114RLT1 is housed in a compact SOT-23-3 package, making it suitable for space-constrained applications. The small form factor does not compromise its performance, as it can handle collector currents up to 100mA while maintaining low saturation voltages, ensuring high efficiency and minimal power loss during operation.

With a collector-emitter voltage of 50V and collector-base voltage also at 50V, this PNP transistor can be used in various circuits that require moderate voltage levels. The device's high current gain is particularly beneficial in amplification applications, where signal strength needs to be increased without significant distortion.

The MMUN2114RLT1 is designed to operate over a wide temperature range, making it reliable for use in environments with varying thermal conditions. This feature, combined with its robustness and ON Semiconductor's commitment to quality, ensures long-term reliability and performance consistency.

Whether you're designing power management circuits, signal amplification stages, or any other application that requires a dependable PNP transistor, the MMUN2114RLT1 from ON Semiconductor is an excellent choice that combines performance, durability, and compactness.