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Same model may have multiple batches, images only for reference.
FQB4P25 Real Image
Same model may have multiple batches, images only for reference.

FQB4P25

Part No FQB4P25
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 250V 4A D2PAK
Datasheet
FQB4P25 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Reel - TR
Status Obsolete(EOL)
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 250V
Continuous Drain Current at 25°C 4A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 5V @ 250μA
Max Gate Charge 14nC @ 10V
Max Input Capacitance 420pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 3.13W (Ta), 75W (Tc)
Maximum Rds On at Id,Vgs 2.1 Ohm @ 2A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package D2PAK (TO-263AB)
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 067384-FQB4P25
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian FQB4P25 CAD Model

Description

The Fairchild/ON Semiconductor 067384-FQB4P25 is a P-channel MOSFET.

  • Power Dissipation: 3.13W (Ta), 75W (Tc)
  • Status: Obsolete (EOL)
  • Temperature Range: -55°C to 150°C (TJ)
  • Supply and Demand: Limited
  • Application: Suitable for use in various electronic applications that require a P-channel MOSFET.

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Quantity Unit Price Ext. Price
5+ $14.0125 $70.0625
11+ $11.4980 $126.4780
16+ $11.1388 $178.2208
22+ $10.7796 $237.1512
28+ $10.4204 $291.7712
38+ $9.3416 $354.9808
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