ON Semiconductor MMUN2211LT3G - Bipolar (BJT) Transistor Array

The ON Semiconductor MMUN2211LT3G is a high-performance, integrated bipolar (BJT) transistor array designed for use in a wide variety of applications. This device is composed of dual transistors in a single package, offering the convenience of shared characteristics for parts within the array. It is a versatile component suitable for signal processing, amplification, and switching applications.

Key Features

• Type: Bipolar Junction Transistors (BJT)
• Configuration: Dual
• Collector-Base Voltage (VCBO): 50V
• Collector-Emitter Voltage (VCEO): 50V
• Emitter-Base Voltage (VEBO): 5V
• Collector Current (IC): 100mA
• DC Current Gain (hFE): 100 to 300 at 10mA, 5V
• Power Dissipation (Pd): 225mW
• Operating Temperature Range: -55°C to +150°C
• Mounting Type: Surface Mount
• Package / Case: SOT-23-3

The MMUN2211LT3G is housed in a compact SOT-23-3 package, making it an ideal choice for space-constrained applications. Its small form factor is complemented by its robustness, with a high collector-base and collector-emitter voltage rating that ensures reliable operation even in demanding conditions.

With a generous collector current rating of 100mA, this transistor array can handle moderate power applications. The device also features a high DC current gain, which ensures that a small base current can control a larger collector current, providing efficient amplification of signals.

The ON Semiconductor MMUN2211LT3G operates over a broad temperature range, from -55°C to +150°C, which makes it suitable for industrial and automotive environments that require high reliability under thermal stress.

Whether you're designing an amplifier circuit, a switch, or any other application that requires a dependable transistor array, the MMUN2211LT3G from ON Semiconductor offers a balanced combination of performance, efficiency, and compactness to meet your design needs.