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MMUN2230LT1

Part No MMUN2230LT1
Manufacturer ON Semiconductor
Catalog Transistors (BJT) - Single, Pre - Biased
Description TRANS PREBIAS NPN 246MW SOT23-3 / NPN SILICON BIAS RESISTOR TRANSISTOR
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Manufacturer ON Semiconductor
Packaging Reel
Part Status Obsolete (End Of Life)
Transistor Type NPN - Pre-Biased
Current - Collector (Ic) (Maximum) 100mA
Voltage - Collector Emitter Breakdown (Maximum) 50V
Resistor - Base (R1) 1 kOhms
Resistor - Emitter Base (R2) 1 kOhms
DC Current Gain (hFE) (Min) at Ic, Vce 3 at 5mA, 10V
Vce Saturation (Maximum) at Ib, Ic 250mV at 5mA, 10mA
Current - Collector Cutoff (Maximum) 500nA
Power - Max 246mW
Mounting Style SMD
Manufacturer Package TO-236-3, SC-59, SOT-23-3
Supplier Device Package SOT-23-3 (TO-236)
Part Number Series MMUN22**L
Manufacturer Pack Quantity 3,000
MSL Level 1 (Unlimited)
Popularity Medium
Supply and Demand Status Balance
Win Source Part Number 805783-MMUN2230LT1
Ultra Librarian 3D Model Ultra Librarian MMUN2230LT1 CAD Model

Description

ON Semiconductor MMUN2230LT1 Bipolar Transistor

The ON Semiconductor MMUN2230LT1 is a high-performance bipolar transistor that is designed to offer a perfect balance between efficiency and reliability for a wide range of applications. This versatile component is a PNP transistor, which is a type of bipolar junction transistor (BJT) that uses holes as the majority charge carriers. The MMUN2230LT1 is particularly well-suited for switching and amplification purposes in various electronic circuits.

With its compact SOT-23 surface-mount package, the MMUN2230LT1 is engineered for space-sensitive applications where a small footprint is essential. This package design not only ensures a reduction in board space but also facilitates easier integration into automated manufacturing processes, making it a preferred choice for mass-produced electronics.

The MMUN2230LT1 boasts a collector-emitter voltage (VCEO) of -50V and a collector current (IC) rating of up to -100mA, making it capable of handling moderate power levels while maintaining a low saturation voltage. This characteristic is critical for applications that require efficient power management and minimal heat generation.

Another key feature of the MMUN2230LT1 is its high current gain (hFE) bandwidth product, which ensures excellent amplification characteristics for analog signals. This makes it an ideal choice for audio amplifiers, signal processing, and other analog applications where signal integrity is paramount.

The device also offers a robust thermal performance, with a junction temperature range of -55°C to +150°C, ensuring reliable operation under a wide range of environmental conditions. This durability is crucial for industrial and automotive applications that may be exposed to extreme temperatures or fluctuating thermal conditions.

Overall, the MMUN2230LT1 from ON Semiconductor is a solid choice for designers looking for a PNP transistor that combines space efficiency, electrical performance, and thermal resilience. Whether it's for consumer electronics, industrial automation, or automotive systems, the MMUN2230LT1 is engineered to meet the demands of modern electronic applications.

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Pricing & Ordering

Quantity Unit Price Ext. Price
2,780+ $0.0208 $57.8240
6,670+ $0.0173 $115.3910
10,715+ $0.0162 $173.5830
14,290+ $0.0162 $231.4980
19,235+ $0.0150 $288.5250
25,000+ $0.0139 $347.5000
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 25,020 pieces
MOQ: 2780 pcs
Order Increment : 1 pcs
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