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MMUN2234LT1G

Part No MMUN2234LT1G
Manufacturer ON Semiconductor
Catalog Transistors (BJT) - Single, Pre - Biased
Description TRANS PREBIAS NPN 0.246W SOT23-3
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Reel - TR
Status Active
Transistor Polarity NPN - Pre-Biased
Maximum Current Collector 100mA
VCEO Maximum Collector-Emitter Breakdown Voltage 50V
Resistor - Base (R1) (Ohms) 22k
Resistor - Emitter Base (R2) (Ohms) 47k
Typical Gain (hFE) (Min) 80 @ 5mA, 10V
Max Vce (sat) 250mV @ 1mA, 10mA
Collector Cut-off Current(Max) 500nA
Maximum Power Dissipation 246mW
Mounting SMD (SMT)
Case / Package SOT-23-3 (TO-236)
Win Source Part Number 1078499-MMUN2234LT1G
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian MMUN2234LT1G CAD Model

Description

ON Semiconductor MMUN2234LT1G

The MMUN2234LT1G is a high-performance bipolar (BJT) transistor from ON Semiconductor, designed for use in a variety of electronic applications requiring efficient current control and amplification. This small-signal transistor is a part of ON Semiconductor's extensive range of semiconductor products known for their reliability and cutting-edge technology.

Key Features

  • Transistor Type: PNP - This transistor is a PNP (Positive-Negative-Positive) type, which means it is designed to pass current from its emitter to collector when a negative base voltage is applied.
  • Voltage Ratings: It can handle a collector-emitter voltage (VCEO) of up to 50V, ensuring it can be used in circuits with moderate voltage requirements without the risk of breakdown.
  • Current Capacity: The MMUN2234LT1G has a continuous collector current (IC) rating of 100mA, making it suitable for tasks like signal amplification and switching applications.
  • Package: This transistor comes in a compact SOT-23 surface-mount package, which is ideal for space-constrained applications and allows for efficient assembly in high-volume production.
  • Power Dissipation: It offers a power dissipation of 225mW, providing a good balance between power handling and size, ensuring that it can manage the thermal aspects of operation in typical circuit designs.
  • hFE (DC Current Gain): The device features a high DC current gain (hFE) range, which enhances its ability to amplify weak signals without significant power loss.

Applications

The MMUN2234LT1G is versatile and can be used in a wide array of electronic circuits. Its primary applications include:

  • Signal amplification in audio, sensor, and communication systems
  • Switching operations in digital and analog circuits
  • Power management in portable devices
  • Driver stages in amplifiers and other electronic devices

ON Semiconductor's commitment to quality ensures that the MMUN2234LT1G meets stringent standards, providing designers with a reliable component for their electronic designs. Whether for industrial, commercial, or consumer applications, this transistor is engineered to deliver superior performance and longevity.

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Pricing & Ordering

Quantity Unit Price Ext. Price
925+ $0.0700 $64.7500
2,255+ $0.0575 $129.6625
3,485+ $0.0558 $194.4630
4,800+ $0.0540 $259.2000
6,205+ $0.0522 $323.9010
8,315+ $0.0467 $388.3105
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 30,000 pieces
MOQ: 925 pcs
Order Increment : 1 pcs
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