ON Semiconductor MSA1162YT1G Overview

The MSA1162YT1G is a high-performance, surface-mountable transistor from ON Semiconductor, designed to meet a wide range of requirements for amplification and switching applications. This device is part of ON Semiconductor's extensive portfolio of semiconductor components known for their reliability and efficiency.

Key Features

• Type: PNP Bipolar Transistor
• Package: SOT-23-3 (TO-236)
• Collector-Emitter Voltage (Vceo): 50V
• Collector-Base Voltage (Vcbo): 80V
• Emitter-Base Voltage (Vebo): 5V
• Collector Current (Ic): 500mA
• Power Dissipation (Pd): 225mW
• DC Current Gain (hFE): 100 to 300 at 10mA Vce
• Operating and Storage Junction Temperature Range: -55°C to +150°C

Applications

The MSA1162YT1G transistor is suited for a variety of electronic applications, including but not limited to:

• Signal amplification circuits
• Audio amplifiers
• Switching circuits
• Driver stages in hi-fi amplifiers and television circuits
• Power management
• Linear amplification and switching

Quality and Environmental Compliance

ON Semiconductor is committed to producing high-quality components that comply with international environmental standards. The MSA1162YT1G is manufactured under strict guidelines to ensure environmental compliance and to meet the requirements of modern electronic devices. It is lead-free, halogen-free, and RoHS compliant, minimizing the environmental impact and making it suitable for use in green products.

Why Choose MSA1162YT1G?

Choosing the MSA1162YT1G for your electronic designs means selecting a transistor that offers a perfect blend of performance, reliability, and environmental responsibility. With ON Semiconductor's reputation for producing durable and efficient components, this transistor is an excellent choice for designers looking to create robust electronic products with long service lives.