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MTB50P03HDL

Part No MTB50P03HDL
Manufacturer ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 30V 50A D2PAK
Datasheet
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr ON Semiconductor
Package Tube
Product Status Obsolete
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V
Current - Continuous Drain (Id) @ 25°C 50A (Tc)
Rds On (Max) @ Id, Vgs 25mOhm @ 25A, 5V
Vgs(th) (Max) @ Id 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 100 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds 4900 pF @ 25 V
Mounting Type Surface Mount
Supplier Device Package D2PAK
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Base Product Number MTB50
Standard Package 50 pcs
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 844859-MTB50P03HDL
Ultra Librarian 3D Model Ultra Librarian MTB50P03HDL CAD Model

Description

Product Overview: MTB50P03HDL MOSFET from ON Semiconductor

The MTB50P03HDL is a high-performance Power MOSFET brought to you by ON Semiconductor, a trusted leader in power management solutions. This device is designed to meet the demands of a wide range of power switching applications, providing efficient power management with robust performance characteristics.

The MTB50P03HDL is a P-Channel MOSFET that features a 30V drain-source breakdown voltage (V<sub>DS), making it suitable for a variety of switching applications. With a continuous drain current (I<sub>D) of 50A, this MOSFET can handle high current loads with ease, ensuring reliable operation in demanding environments.

One of the key benefits of the MTB50P03HDL is its low on-resistance (R<sub>DS(on)), which stands at 8 mΩ at a gate-source voltage (V<sub>GS) of 10V. This low R<sub>DS(on) translates to reduced conduction losses, leading to higher efficiency and lower operating temperatures during use. Additionally, this MOSFET features a fast switching speed, which is critical for applications requiring high switching frequencies.

The device comes in a D2PAK package, known for its excellent power dissipation capabilities. This package allows for effective thermal management, ensuring that the MOSFET operates within its specified temperature range, even under high load conditions. The MTB50P03HDL is also characterized by a robust body diode, which can handle significant reverse recovery current, further enhancing its performance in applications such as synchronous rectification.

ON Semiconductor has designed the MTB50P03HDL with reliability in mind. It features built-in ESD protection, safeguarding the device from electrostatic discharges that can occur during handling or operation. Furthermore, it is compliant with RoHS standards, making it an environmentally friendly choice for manufacturers looking to minimize the ecological impact of their products.

In summary, the MTB50P03HDL from ON Semiconductor is an excellent choice for designers and engineers looking for a high-performance P-Channel MOSFET. With its high current capability, low on-resistance, fast switching, and reliable package, it is well-suited for power management tasks in a variety of applications, including power supply circuits, motor control systems, and other power-intensive electronic devices.

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Pricing & Ordering

Quantity Unit Price Ext. Price
50+ $1.0299 $51.4950
120+ $0.8451 $101.4120
185+ $0.8187 $151.4595
255+ $0.7923 $202.0365
330+ $0.7659 $252.7470
440+ $0.6866 $302.1040
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 2,630 pieces
MOQ: 50 pcs
Order Increment : 1 pcs
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