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MTD20P06HDLT4

Part No MTD20P06HDLT4
Manufacturer ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 60V 15A DPAK
Datasheet
Sample
Rohs State Need to verify
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Reel - TR
Status Obsolete(EOL)
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 60V
Continuous Drain Current at 25°C 15A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 5V
Gate-Source Threshold Voltage 2V @ 250μA
Max Gate Charge 29nC @ 5V
Max Input Capacitance 1190pF @ 25V
Maximum Gate-Source Voltage ±15V
Power Dissipation (Max) 72W (Tc)
Maximum Rds On at Id,Vgs 175 mOhm @ 7.5A, 5V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package DPAK-3
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 1081052-MTD20P06HDLT4
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian MTD20P06HDLT4 CAD Model

Description

ON Semiconductor MTD20P06HDLT4 P-Channel Power MOSFET

The MTD20P06HDLT4 is a high-performance P-Channel Power MOSFET designed and manufactured by ON Semiconductor, a leading provider in energy-efficient electronics innovation. This power MOSFET is engineered to deliver efficient power management and switching with an emphasis on minimizing energy losses during operation.

With a drain-source voltage (Vdss) of -60V and a continuous drain current (Id) of -20A, the MTD20P06HDLT4 is capable of handling significant power for a wide range of applications. The device features a low threshold voltage (Vgs(th)) which ensures that it can be driven at lower gate voltages, enhancing its compatibility with contemporary logic-level circuits and microcontrollers.

The MOSFET's RDS(on) specifications are particularly noteworthy, with a typical value of 70mΩ, which indicates a very low level of resistance in the conductive state. This low on-resistance is crucial for applications that require high efficiency and lower heat dissipation. The MTD20P06HDLT4, with its excellent on-resistance, is suitable for high-side switching applications that are common in power management systems.

One of the standout features of this MOSFET is its robust thermal performance. The device is housed in a DPAK package, which not only allows for compact design but also provides superior thermal conduction through the tab. This package design enables the MOSFET to maintain operational integrity even under high-temperature conditions, making it a reliable choice for thermally demanding environments.

The MTD20P06HDLT4 also incorporates advanced protection features such as a built-in diode for avalanche energy protection, ensuring the device's longevity and reliability when subjected to high-energy pulses. Its fast switching speed is a boon for applications that require rapid power cycling with minimal delay.

Overall, the ON Semiconductor MTD20P06HDLT4 P-Channel Power MOSFET is an excellent choice for designers looking for a high-performance power switch that combines energy efficiency, thermal management, and high current handling capabilities. It is ideal for a variety of applications, including power supply circuits, motor control, and other power-intensive electronic systems.

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Pricing & Ordering

Quantity Unit Price Ext. Price
360+ $0.1617 $58.2120
870+ $0.1328 $115.5360
1,340+ $0.1294 $173.3960
1,855+ $0.1247 $231.3185
2,385+ $0.1213 $289.3005
3,195+ $0.1086 $346.9770
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 10,000 pieces
MOQ: 360 pcs
Order Increment : 1 pcs
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