The MTD2N40ET4 is a high-performance MOSFET brought to you by ON Semiconductor, a company renowned for its innovative approach to power and signal management. This particular product is designed to cater to a wide array of applications, ranging from power supply switches to motor drives, ensuring efficient operation and power management across various electronic systems.

Key Features

• Device Type: Trench MOSFET
• Configuration: Single N-Channel
• Drain-to-Source Breakdown Voltage (V<sub>DS): 400V
• Continuous Drain Current (I<sub>D): 2.5A
• Gate-to-Source Voltage (V<sub>GS): ±20V
• Total Gate Charge (Q<sub>g): 15 nC
• R<sub>DS(on): 1.75 Ohm
• Power Dissipation (P<sub>D): 48W
• Package: DPAK (TO-252)

Performance and Efficiency

The MTD2N40ET4 MOSFET is engineered to deliver high-speed switching with low on-resistance and minimal gate charge, reducing both conduction and switching losses. This makes it an excellent choice for power conversion applications where efficiency is paramount. The device's robust 400V drain-to-source breakdown voltage ensures reliable operation even under high voltage conditions.

Thermal Management

With a power dissipation of 48W, the MTD2N40ET4 is equipped to handle significant energy without overheating. Its DPAK package is designed for optimal thermal performance, ensuring longevity and stable operation throughout its lifespan.

Applications

The versatility of the MTD2N40ET4 allows it to be used in a variety of applications. It is particularly well-suited for:

• Switch Mode Power Supplies (SMPS)
• DC-to-AC inverters
• DC-to-DC converters
• Motor control circuits
• Power management functions

ON Semiconductor's commitment to quality ensures that the MTD2N40ET4 MOSFET not only meets but exceeds industry standards for performance and reliability. Whether you're designing for industrial, automotive, or consumer electronics, the MTD2N40ET4 is a solid choice for efficient and dependable power switching.