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MTD6N20ET4

Part No MTD6N20ET4
Manufacturer ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 200V 6A DPAK
Datasheet
Sample
Rohs State Need to verify
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Cut Reel
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 200V
Continuous Drain Current at 25°C 6A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 21nC @ 10V
Max Input Capacitance 480pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 1.75W (Ta), 50W (Tc)
Maximum Rds On at Id,Vgs 700 mOhm @ 3A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package DPAK
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 112600-MTD6N20ET4
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian MTD6N20ET4 CAD Model

Description

Introducing the MTD6N20ET4 MOSFET from ON Semiconductor

The MTD6N20ET4 is a high-performance Power MOSFET brought to you by ON Semiconductor, a renowned leader in power and signal management. This MOSFET is designed to meet the stringent requirements of modern electronic circuits, offering a perfect blend of low on-resistance and high switching speed. The device is housed in a compact DPAK package, which is ideal for space-constrained applications.

Key Features:

  • Low On-Resistance: The MTD6N20ET4 boasts an exceptionally low on-resistance, which minimizes conduction losses and enhances overall efficiency. This feature is particularly beneficial in applications that demand high current flow with minimal voltage drop.
  • High Switching Speed: With its fast switching capabilities, the MTD6N20ET4 reduces switching losses, making it suitable for high-frequency power switching applications.
  • Advanced Technology: Manufactured with ON Semiconductor's advanced trench technology, the MTD6N20ET4 offers superior performance and reliability.
  • Thermal Management: The DPAK package provides excellent thermal performance, ensuring the MOSFET operates within its specified temperature range even under high load conditions.
  • Voltage Rating: The device is rated for a drain-to-source voltage of 200V, making it suitable for a wide range of power applications.

Applications:

The MTD6N20ET4 is versatile and can be used in various applications, including:

  • Power supply circuits
  • DC-DC converters
  • Motor drives
  • Switching regulators
  • Automotive systems
  • Lighting solutions

Reliability and Quality:

ON Semiconductor is committed to the highest standards of quality and reliability. The MTD6N20ET4 is rigorously tested to ensure it meets the stringent requirements for industrial and automotive applications. Customers can trust in the consistent performance and durability of this MOSFET in their electronic designs.

Whether you are designing power management systems or looking to improve the efficiency of your existing applications, the MTD6N20ET4 from ON Semiconductor is a powerful solution that delivers performance you can rely on.

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Pricing & Ordering

Quantity Unit Price Ext. Price
65+ $0.9385 $61.0025
150+ $0.7701 $115.5150
235+ $0.7461 $175.3335
320+ $0.7219 $231.0080
415+ $0.6979 $289.6285
555+ $0.6257 $347.2635
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 2,766 pieces
MOQ: 65 pcs
Order Increment : 1 pcs
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