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MUN2211T1G

Part No MUN2211T1G
Manufacturer ON Semiconductor
Catalog Transistors (BJT) - Single, Pre - Biased
Description TRANS PREBIAS NPN 338MW SC59
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Reel - TR
Status Active
Transistor Polarity NPN - Pre-Biased
Maximum Current Collector 100mA
VCEO Maximum Collector-Emitter Breakdown Voltage 50V
Resistor - Base (R1) (Ohms) 10k
Resistor - Emitter Base (R2) (Ohms) 10k
Typical Gain (hFE) (Min) 35 @ 5mA, 10V
Max Vce (sat) 250mV @ 300μA, 10mA
Collector Cut-off Current(Max) 500nA
Maximum Power Dissipation 230mW
Mounting SMD (SMT)
Case / Package SC-59
Win Source Part Number 024591-MUN2211T1G
Popularity Medium
Supply and Demand Status Sufficient
Application Field Used in Industrial, Automotive, Power Management
Ultra Librarian 3D Model Ultra Librarian MUN2211T1G CAD Model

Description

Product Overview: MUN2211T1G from ON Semiconductor

The MUN2211T1G is a robust bipolar transistor from ON Semiconductor, designed to offer a perfect blend of performance and reliability for a wide array of applications. This small-signal transistor is a part of ON Semiconductor's extensive portfolio of semiconductor components that are known for their quality and efficiency.

Key Features

  • Transistor Type: The MUN2211T1G is a PNP (Positive-Negative-Positive) bipolar junction transistor (BJT), which is ideal for use as a switch or amplifier in electronic circuits.
  • Package: It is packaged in a compact SOT-23 surface-mount package, which allows for high-density mounting and is suitable for automated assembly processes.
  • Power Dissipation: This transistor is capable of dissipating up to 225 mW of power, making it suitable for moderate power applications.
  • Collector-Emitter Voltage: It has a maximum collector-emitter voltage (VCEO) of 50 V, which ensures stable operation in circuits with moderate voltage requirements.
  • Collector Current: With a continuous collector current (IC) rating of up to 100 mA, it can handle a good amount of current for signal processing tasks.
  • Gain Bandwidth Product: The MUN2211T1G features a gain bandwidth product (fT) of 250 MHz, providing excellent frequency response for amplification purposes.

Applications

The MUN2211T1G is versatile and can be used in various applications, including:

  • General-purpose switching and amplification
  • Audio signal amplification
  • Driver stages in audio amplifiers
  • Signal processing
  • Power management in portable devices
  • Control systems

Quality and Reliability

ON Semiconductor is committed to providing high-quality products that meet the stringent requirements of the electronics industry. The MUN2211T1G is manufactured with the company's advanced process technology, ensuring high reliability and performance consistency. The device is also RoHS compliant, minimizing the environmental impact by avoiding the use of hazardous substances.

Whether you are designing consumer electronics, industrial control systems, or portable devices, the MUN2211T1G from ON Semiconductor is an excellent choice for your switching and amplification needs, delivering both performance and durability in a small package.

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Pricing & Ordering

Quantity Unit Price Ext. Price
1,640+ $0.0305 $50.0200
4,000+ $0.0250 $100.0000
6,200+ $0.0242 $150.0400
8,550+ $0.0234 $200.0700
11,015+ $0.0227 $250.0405
14,780+ $0.0203 $300.0340
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 930,000 pieces
MOQ: 1640 pcs
Order Increment : 1 pcs
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