ON Semiconductor MUN5114DW1T1 Bipolar Transistor

The MUN5114DW1T1 from ON Semiconductor is a high-performance bipolar (BJT) transistor, specifically designed to meet the needs of low-power and energy-efficient applications. This dual transistor device is housed in a compact SOT-363 package, which is ideal for space-constrained applications.

Key Features

• Type: PNP
• Configuration: Dual
• Collector-Emitter Voltage (VCEO): 50V
• Collector-Base Voltage (VCBO): 50V
• Emitter-Base Voltage (VEBO): 5V
• Collector Current (IC): 100mA
• DC Current Gain (hFE): 100 at 10mA, 5V
• Power Dissipation (Pd): 200mW
• Operating Temperature Range: -55°C to +150°C
• Package / Case: SOT-363

With its dual PNP transistor configuration, the MUN5114DW1T1 is capable of driving moderate loads while maintaining high voltage and current levels. The collector-emitter voltage of 50V and collector current of 100mA make it suitable for a variety of switching and amplification tasks within electronic circuits.

Applications

The MUN5114DW1T1 is versatile and can be used in a wide array of applications, including but not limited to:

• Signal processing
• Power management
• Switching regulators
• Motor controllers
• Audio amplifiers
• General-purpose amplification

Its small form factor and low power consumption make it an excellent choice for portable and battery-powered devices, where efficiency and space-saving are crucial.

Quality and Reliability

ON Semiconductor is known for its commitment to quality and reliability, and the MUN5114DW1T1 is no exception. It is designed to meet stringent industry standards, ensuring performance and durability in even the most demanding conditions. Whether you're designing consumer electronics or industrial systems, the MUN5114DW1T1 offers a reliable solution for your transistor needs.

For detailed specifications, application notes, and additional resources, designers are encouraged to consult the official ON Semiconductor datasheets and product documentation.