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MUN5131DW1T1G

Part No MUN5131DW1T1G
Manufacturer ON Semiconductor
Catalog Transistors (BJT) - Arrays, Pre - Biased
Description TRANS PREBIAS 2PNP 50V SC88
Datasheet
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Bipolar Transistor Arrays, Pre-Biased
Mfr ON Semiconductor
Package Tape & Reel
Product Status Active
Transistor Type 2 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max) 100mA
Voltage - Collector Emitter Breakdown (Max) 50V
Resistor - Base (R1) 2.2kOhms
Resistor - Emitter Base (R2) 2.2kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce 8 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic 250mV @ 5mA, 10mA
Current - Collector Cutoff (Max) 500nA
Power - Max 250mW
Mounting Type Surface Mount
Package / Case 6-TSSOP, SC-88, SOT-363
Supplier Device Package SC-88/SC70-6/SOT-363
Base Product Number MUN5131
Standard Package 3,000 pcs
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.21.0095
Win Source Part Number 645724-MUN5131DW1T1G
Ultra Librarian 3D Model Ultra Librarian MUN5131DW1T1G CAD Model

Description

Overview of Product MUN5131DW1T1G from ON Semiconductor

The MUN5131DW1T1G is a high-performance, dual digital transistor manufactured by ON Semiconductor, a leader in energy-efficient innovations. This product is designed to offer a compact and efficient solution for a variety of digital switching applications. It integrates two independent transistors in a single SOT-363 package, which not only saves space on the PCB but also reduces the component count in circuit designs.

Key Features

  • Dual Transistor Configuration: The MUN5131DW1T1G contains two PNP transistors, which can be used independently or in combination, offering design flexibility.
  • Small Package: The SOT-363 package is ideal for space-constrained applications, providing significant space savings on printed circuit boards.
  • High Current Gain: The device features a high current gain (hFE), ensuring efficient operation and signal amplification.
  • Low VCE(sat): It offers low collector-emitter saturation voltage, which translates to reduced power dissipation and improved energy efficiency.
  • Complementary Type: The MUN5131DW1T1G is complemented by the NUN5131DW1T1G, which houses two NPN transistors, allowing for versatile circuit design.

Applications

The MUN5131DW1T1G is suitable for a wide range of applications, including but not limited to:

  • Inverter circuits
  • Interface circuits
  • Driver circuits
  • Signal processing
  • Power management

Reliability and Quality

ON Semiconductor is known for its commitment to quality and reliability, and the MUN5131DW1T1G is no exception. It is designed to meet the rigorous standards of the industry, ensuring stable performance and longevity in the field. The device is also RoHS compliant, adhering to environmental standards by avoiding the use of hazardous substances.

Conclusion

The MUN5131DW1T1G from ON Semiconductor is an excellent choice for designers looking for a reliable, space-saving solution for digital switching applications. Its dual transistor design, high current gain, and low VCE(sat) make it a versatile component that can be used in a variety of circuits, while maintaining energy efficiency and reducing overall component count.

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Pricing & Ordering

Quantity Unit Price Ext. Price
1,260+ $0.0460 $57.9600
3,060+ $0.0378 $115.6680
4,735+ $0.0367 $173.7745
6,515+ $0.0355 $231.2825
8,450+ $0.0342 $288.9900
11,280+ $0.0307 $346.2960
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 40,000 pieces
MOQ: 1260 pcs
Order Increment : 1 pcs
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