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MUN5215DW1T1G

Part No MUN5215DW1T1G
Manufacturer ON Semiconductor
Catalog Transistors (BJT) - Arrays, Pre - Biased
Description TRANS 2NPN PREBIAS 0.25W SOT363
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Reel - TR
Status Active
Transistor Polarity 2 NPN - Pre-Biased (Dual)
Maximum Current Collector 100mA
VCEO Maximum Collector-Emitter Breakdown Voltage 50V
Resistor - Base (R1) (Ohms) 10k
Typical Gain (hFE) (Min) 160 @ 5mA, 10V
Max Vce (sat) 250mV @ 1mA, 10mA
Collector Cut-off Current(Max) 500nA
Maximum Power Dissipation 250mW
Mounting SMD (SMT)
Case / Package SC-88/SC70-6/SOT-363
Win Source Part Number 024608-MUN5215DW1T1G
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian MUN5215DW1T1G CAD Model

Description

ON Semiconductor MUN5215DW1T1G: Dual Digital Transistors

The MUN5215DW1T1G is a high-performance dual digital transistor product from ON Semiconductor, designed to simplify circuit design and miniaturize PCB layouts in a wide range of applications. This innovative component integrates two individual pre-biased transistors in a single SOT-363 package, providing a compact and efficient solution for designers.

Key Features

  • Integrated Design: The MUN5215DW1T1G combines two PNP transistors, each with a built-in bias resistor network. This integration reduces component count and simplifies circuit design, leading to a more streamlined manufacturing process.
  • Small Footprint: Encased in a tiny SOT-363 surface-mount package, this dual transistor is ideal for space-constrained applications, allowing for high-density PCB layouts and smaller end products.
  • Pre-Biased Configuration: With built-in resistors, the transistors are pre-biased to ensure stable operation. This feature minimizes external components and simplifies the biasing process during circuit design.
  • High Performance: The MUN5215DW1T1G offers excellent switching performance and is designed for low power consumption, making it suitable for power management functions in portable and battery-powered devices.
  • Robust Construction: Manufactured by ON Semiconductor, a leader in semiconductor solutions, this product is built to high-quality standards, ensuring reliability and longevity in a variety of operating conditions.

Applications

The dual digital transistors are versatile and can be used in numerous electronic applications. They are particularly useful in:

  • Inverter circuits
  • Interface circuits
  • Driver circuits
  • Signal processing
  • Power management for portable devices

Technical Specifications

The MUN5215DW1T1G has the following technical specifications:

  • Transistor Polarity: PNP
  • Collector-Emitter Voltage (Vceo): 50V
  • Collector Current (Ic): 100mA
  • Resistor Ratios: R1/R2 = 47 kOhm/47 kOhm
  • Operating Temperature Range: -55°C to +150°C
  • Package: SOT-363
  • RoHS Compliant

Overall, the MUN5215DW1T1G from ON Semiconductor represents a reliable and efficient solution for designers looking to reduce complexity and enhance the performance of their electronic circuits.

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Pricing & Ordering

Quantity Unit Price Ext. Price
1,055+ $0.0476 $50.2180
2,565+ $0.0390 $100.0350
3,970+ $0.0378 $150.0660
5,465+ $0.0366 $200.0190
7,065+ $0.0354 $250.1010
9,465+ $0.0317 $300.0405
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 5,520 pieces
MOQ: 1055 pcs
Order Increment : 1 pcs
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