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NCP5111DR2G

Part No NCP5111DR2G
Manufacturer ON Semiconductor
Catalog PMIC - Gate Drivers
Description IC DRIVER HI/LOW SIDE HV 8-SOIC
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Integrated Circuits
Manufacturer ON Semiconductor
Packaging Reel - TR
Status Active
Driven Configuration Half-Bridge
Channel Type Synchronous
Number of Drivers 2
Gate Type IGBT, N-Channel MOSFET
Supply Voltage - Operating 10 V to 20 V
Logic Voltage - VIL, VIH 0.8V, 2.3V
Current - Peak Output (Source, Sink) 250mA, 500mA
Input Type Non-Inverting
High Side Voltage - Max (Bootstrap) 600V
Rise and Fall Time 85ns, 35ns
Temperature Range - Operating -40°C to 125°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SOIC
Win Source Part Number 1082221-NCP5111DR2G
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian NCP5111DR2G CAD Model

Description

ON Semiconductor NCP5111DR2G High Voltage High and Low-Side Driver

The NCP5111DR2G is a high-performance, high voltage gate driver capable of driving N-channel MOSFETs and IGBTs in a half-bridge configuration. Manufactured by ON Semiconductor, a leading supplier in the semiconductor industry, this driver is designed for a wide range of applications, including switch mode power supplies, motor control, and inverter systems. The NCP5111DR2G is a testament to ON Semiconductor's commitment to providing innovative solutions that enhance power efficiency and reliability.

Featuring a high voltage range, the NCP5111DR2G is able to operate with a bootstrap supply voltage up to 600V, making it suitable for high-voltage applications. It integrates a high-voltage high-side driver and a low-side driver into a single compact SOIC-8 package, offering excellent power density for space-constrained applications. The device's high current drive capability ensures fast and efficient switching of power devices, enhancing the overall performance of the system.

The NCP5111DR2G incorporates advanced protection features to ensure robust operation under harsh conditions. It includes a programmable dead-time control that prevents cross-conduction and shoot-through in the power stage, as well as an under-voltage lockout (UVLO) feature on both the high-side and low-side to ensure that the device operates only when sufficient gate drive voltage is present.

With its wide operating temperature range and the ability to handle significant power, the NCP5111DR2G is an excellent choice for designers looking to create efficient and reliable power management systems. Its ease of use, combined with the protection features, makes it a versatile and safe option for a multitude of high-voltage applications.

Overall, the NCP5111DR2G from ON Semiconductor is a robust and high-performing gate driver that offers a mix of high-voltage operation, high current drive, and advanced protection mechanisms. It is an ideal solution for engineers seeking to improve the efficiency and reliability of their power conversion and motor control systems.

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Pricing & Ordering

Quantity Unit Price Ext. Price
90+ $0.6622 $59.5980
215+ $0.5433 $116.8095
330+ $0.5264 $173.7120
455+ $0.5094 $231.7770
590+ $0.4924 $290.5160
785+ $0.4414 $346.4990
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 21,000 pieces
MOQ: 90 pcs
Order Increment : 1 pcs
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