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NCP5111PG

Part No NCP5111PG
Manufacturer ON Semiconductor
Catalog PMIC - Gate Drivers
Description High Voltage, High and Low Side Driver
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Integrated Circuits (ICs)
Manufacturer ON Semiconductor
Packaging Tube
Driven Configuration Half-Bridge
Channel Type Synchronous
Number of Drivers 2
Gate Type IGBT, N-Channel MOSFET
Operating Supply Voltage 10 V ~ 20 V
Logic Voltage - VIL, VIH 0.8V, 2.3V
Current - Peak Output (Source, Sink) 250mA, 500mA
High Side Voltage - Max (Bootstrap) 600V
Rise / Fall Time (Typ) 85ns, 35ns
Operating Temperature Range -40°C ~ 125°C (TJ)
Mounting Style Through Hole
Package 8-DIP (0.300", 7.62mm)
Manufacturer Package 8-PDIP
Win Source Part Number 1230319-NCP5111PG
Manufacturer Homepage www.onsemi.com
Family Name NCP5111
Introduction Date April 12, 2007
ECCN EAR99
Country of Origin China
Halogen Free Compliant
Estimated EOL Date Obsolete
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian NCP5111PG CAD Model

Description

The NCP5111PG is a high-performance, high-voltage half-bridge driver manufactured by ON Semiconductor, designed to efficiently drive MOSFETs in a half-bridge configuration. This driver is particularly suitable for applications that require high-speed operation and efficient power management, such as switch-mode power supplies, motor controllers, and inverter circuits.

Key Features

  • High Voltage Range: The NCP5111PG operates with a supply voltage up to 600V, making it suitable for a wide range of high-voltage applications.
  • High Current Drive Capability: It can source up to 350 mA and sink up to 650 mA, providing robust drive capability for the power MOSFETs.
  • Dual Independent Inputs: With separate logic inputs for the high-side and low-side drivers, it offers flexibility and precise control over the switching actions.
  • Under-Voltage Lockout (UVLO): The UVLO feature ensures that the device operates only when the supply voltage is sufficient, thereby protecting the MOSFETs from insufficient gate voltage.
  • Matched Propagation Delays: This characteristic ensures better control and efficiency by providing symmetrical operation of the high-side and low-side drivers.
  • Cross-Conduction Prevention: The built-in dead-time insertion helps to prevent shoot-through by ensuring that both high-side and low-side MOSFETs are not on simultaneously.
  • Extended Temperature Range: The NCP5111PG is designed to operate over an extended temperature range, making it suitable for industrial applications.

Applications

The versatility of the NCP5111PG makes it an ideal choice for a variety of applications, including:

  • AC-DC and DC-DC Converters
  • Resonant Converters
  • Motor Control Circuits
  • Power Inverters
  • Electronic Lighting Ballasts

Package and Availability

The NCP5111PG is offered in a PDIP-8 package, providing a compact solution with easy integration into various circuit designs. For detailed specifications, pricing, and availability, interested customers should contact ON Semiconductor or authorized distributors.

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Pricing & Ordering

Quantity Unit Price Ext. Price
50+ $1.1836 $59.1800
120+ $0.9711 $116.5320
185+ $0.9409 $174.0665
255+ $0.9105 $232.1775
330+ $0.8801 $290.4330
440+ $0.7891 $347.2040
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 2,110 pieces
MOQ: 50 pcs
Order Increment : 1 pcs
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