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NCP5359DR2G

Part No NCP5359DR2G
Manufacturer ON Semiconductor
Catalog PMIC - Gate Drivers
Description IC GATE DRIVER VR11.1/AMD 8-SOIC
Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Integrated Circuits
Manufacturer ON Semiconductor
Packaging Reel - TR
Status Active
Driven Configuration Half-Bridge
Channel Type Synchronous
Number of Drivers 2
Gate Type N-Channel MOSFET
Supply Voltage - Operating 10 V to 13.2 V
Logic Voltage - VIL, VIH 1V, 2V
Input Type Non-Inverting
High Side Voltage - Max (Bootstrap) 35V
Rise and Fall Time 16ns, 11ns
Temperature Range - Operating 0°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SOIC
Win Source Part Number 025067-NCP5359DR2G
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian NCP5359DR2G CAD Model

Description

ON Semiconductor NCP5359DR2G Overview

The NCP5359DR2G is a high-performance, dual MOSFET driver designed by ON Semiconductor, tailored specifically for use in a variety of demanding applications. This versatile driver is capable of efficiently driving two N-channel power MOSFETs in a synchronous buck converter, which is widely used in computing and telecommunication power supplies due to its efficiency and reliability.

Key Features

  • High Peak Output Drive Current: The device is capable of delivering a peak output drive current of up to 3A, ensuring robust and reliable operation of the connected MOSFETs.
  • Adaptive Shoot-Through Protection: To prevent potentially damaging shoot-through current, the NCP5359DR2G integrates adaptive shoot-through protection that intelligently adjusts to the switching conditions.
  • High Switching Frequency: It supports high switching frequencies, which allows for the design of power supplies with smaller passive components, resulting in a more compact and cost-effective solution.
  • Dual Independent Drive Channels: The device features two independent drive channels, which provides design flexibility and simplifies the implementation of synchronous buck converter topologies.
  • Under-Voltage Lockout (UVLO): The built-in UVLO function ensures that the device operates only when the supply voltage is within the specified range, enhancing system safety and reliability.
  • Cross-Conduction Prevention: The NCP5359DR2G includes measures to prevent cross-conduction, which can lead to increased power loss and heat generation.

Applications

The NCP5359DR2G is ideal for a range of applications that require efficient power management, including:

  • Desktop and notebook computers
  • Servers and networking equipment
  • Graphics cards and gaming consoles
  • DC-DC converters
  • Telecommunication systems

Package and Availability

ON Semiconductor's NCP5359DR2G is offered in a compact, surface-mount SOIC-8 package, which is suitable for automated assembly processes and saves valuable board space. This device is available through various distributors, making it accessible for both large-scale production and individual projects.

In conclusion, the NCP5359DR2G from ON Semiconductor is a robust and efficient solution for driving N-channel power MOSFETs in synchronous buck converters, providing designers with a reliable and flexible component for their power management needs.

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Pricing & Ordering

Quantity Unit Price Ext. Price
55+ $1.1404 $62.7220
125+ $0.9357 $116.9625
195+ $0.9064 $176.7480
265+ $0.8773 $232.4845
345+ $0.8480 $292.5600
460+ $0.7602 $349.6920
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 4,550 pieces
MOQ: 55 pcs
Order Increment : 1 pcs
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