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NDD02N40-1G

Part No NDD02N40-1G
Manufacturer ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 400V 1.7A IPAK  /  N-Channel 400 V 1.7A (Tc) 39W (Tc) Through Hole I-Pak
Datasheet
Sample
Rohs State Need to verify
ECAD Module
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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr onsemi
Package Tube
Product Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 400 V
Current - Continuous Drain (Id) @ 25°C 1.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 5.5Ohm @ 220mA, 10V
Vgs(th) (Max) @ Id 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 5.5 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 121 pF @ 25 V
Power Dissipation (Max) 39W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package I-PAK
Package / Case TO-251-3 Short Leads, IPak, TO-251AA
Base Product Number NDD02
MSL Level 3 (168 Hours)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Other Names NDD02N40-1G-ND,NDD02N40-1GOS
Standard Package 75
Win Source Part Number 1209265-NDD02N40-1G
Ultra Librarian 3D Model Ultra Librarian NDD02N40-1G CAD Model

Description

The NDD02N40-1G is a high-performance N-Channel Power MOSFET designed and manufactured by ON Semiconductor, a leader in energy-efficient innovations. This MOSFET is a robust and efficient solution for a wide range of power management applications. It is particularly well-suited for high-efficiency power conversion and switching applications where low on-resistance and high blocking voltage are essential.

Featuring a drain-to-source breakdown voltage (V<sub>DS) of 400V, the NDD02N40-1G is capable of handling high voltage requirements with ease. This makes it an excellent choice for applications such as switch-mode power supplies (SMPS), lighting, DC-DC converters, and motor drives. Its continuous drain current (I<sub>D) of 2A ensures that it can manage substantial current loads, providing reliable performance in demanding situations.

The device boasts a low on-state resistance (R<sub>DS(on)) of just 3.5Ω, which minimizes conduction losses and enhances overall efficiency. This feature, combined with a fast switching speed, reduces power losses during operation, making the NDD02N40-1G a power-saving solution for modern electronic circuits.

Housed in a compact TO-92 package, the NDD02N40-1G is designed for easy integration into various circuit designs without occupying significant board space. Its lead-free and RoHS-compliant construction reflects ON Semiconductor's commitment to environmental sustainability while maintaining high-quality standards.

ON Semiconductor provides comprehensive technical support for the NDD02N40-1G, including detailed datasheets, application notes, and design tools. This support ensures that designers can fully leverage the capabilities of this MOSFET in their applications.

In summary, the NDD02N40-1G from ON Semiconductor is a reliable and efficient choice for designers looking to improve power management in electronic devices. Its high voltage rating, low on-resistance, and fast switching capabilities make it a versatile component that can enhance the performance and efficiency of a wide array of power applications.

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