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NDD03N60Z-1G

Part No NDD03N60Z-1G
Manufacturer ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description N-Channel Power MOSFET 600 V, 3.3
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Tube
Part Status Obsolete(EOL)
Channel Type Type N
Technology MOSFET
Drain Source Voltage 600V
Current - Continuous Drain (Id) @ 25°C 2.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Vgs(th) (Maximum) @ Id 4.5V @ 50μA
Gate Charge (Qg) (Maximum) @ Vgs 12nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds 312pF @ 25V
Vgs (Maximum) ±30V
Power Dissipation (Maximum) 61W (Tc)
Rds On (Maximum) @ Id, Vgs 3.6 Ohm @ 1.2A, 10V
Operating Temperature Range -55°C ~ 150°C (TJ)
Mounting Style Through Hole
Manufacturer Package I-Pak
Package TO-251-3 Short Leads, IPak, TO-251AA
Win Source Part Number 1230846-NDD03N60Z-1G
Manufacturer Homepage www.onsemi.com
Popularity Medium
Supply and Demand Status Balance
Family Name NDD03N60Z
Introduction Date February 01, 2010
ECCN EAR99
Country of Origin Malaysia
Halogen Free Compliant
Estimated EOL Date Obsolete
Ultra Librarian 3D Model Ultra Librarian NDD03N60Z-1G CAD Model

Description

The NDD03N60Z-1G is a high-performance Power MOSFET brought to you by ON Semiconductor, a renowned leader in power and signal management solutions. This particular MOSFET is designed to meet a wide range of applications, offering efficiency and reliability for power management tasks. It is a valuable component for designers looking to enhance system performance in sectors such as computing, consumer electronics, industrial, and automotive systems.

Key Features

  • High Efficiency: The NDD03N60Z-1G boasts a low on-resistance (R<sub>DS(on)), which translates to reduced conduction losses and improved overall efficiency in electronic circuits.
  • High Current Capacity: This MOSFET can handle a continuous drain current (I<sub>D), making it suitable for high-power applications.
  • High-Speed Switching: With fast switching capabilities, the NDD03N60Z-1G is ideal for high-frequency power conversion systems, reducing switching losses and improving performance.
  • Robust Thermal Performance: The device's design ensures excellent thermal performance, enabling it to operate reliably over a wide temperature range without overheating.
  • Integrated Protection Features: It includes built-in protection features such as overcurrent and overtemperature protection, ensuring the longevity and safe operation of the MOSFET and the systems it powers.

Applications

The versatility of the NDD03N60Z-1G makes it an excellent choice for a variety of applications, including:

  • Switch Mode Power Supplies (SMPS)
  • DC-DC Converters
  • Motor Control Circuits
  • Power Inverter Systems
  • LED Lighting Solutions

Quality and Reliability

ON Semiconductor is committed to delivering high-quality products. The NDD03N60Z-1G is manufactured with state-of-the-art technology, ensuring that it meets the stringent requirements of the most demanding electronic systems. With its robust design and ON Semiconductor's rigorous testing, you can expect reliable operation and a long service life from this Power MOSFET.

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Pricing & Ordering

Quantity Unit Price Ext. Price
185+ $0.3130 $57.9050
450+ $0.2576 $115.9200
695+ $0.2495 $173.4025
960+ $0.2414 $231.7440
1,240+ $0.2333 $289.2920
1,660+ $0.2091 $347.1060
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 71,500 pieces
MOQ: 185 pcs
Order Increment : 1 pcs
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