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NDF03N60ZG

Part No NDF03N60ZG
Manufacturer ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 600V 3.1A TO220FP
Datasheet
Sample
Rohs State rohs
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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 600V
Continuous Drain Current at 25°C 3.1A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4.5V @ 50μA
Max Gate Charge 18nC @ 10V
Max Input Capacitance 372pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 27W (Tc)
Maximum Rds On at Id,Vgs 3.6 Ohm @ 1.2A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-220FP
Dimension TO-220-3 Full Pack
Win Source Part Number 1005352-NDF03N60ZG
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian NDF03N60ZG CAD Model

Description

The NDF03N60ZG is a high-performance, energy-efficient N-channel MOSFET designed by ON Semiconductor, a trusted name in the field of power management and semiconductor solutions. This MOSFET is a part of ON Semiconductor's extensive portfolio, designed to cater to a wide range of power applications, particularly those requiring high-density and low-power consumption.

With a 600V drain-source voltage (V<sub>DS), the NDF03N60ZG is well-suited for high-voltage applications. This feature, combined with a low on-state resistance (R<sub>DS(on)) of just 2.3 Ohms, ensures that the device can handle significant power without a significant voltage drop, leading to more efficient circuit operation and reduced heat generation.

The NDF03N60ZG boasts a continuous drain current (I<sub>D) of 3A, making it capable of driving moderate loads with ease. The device's power dissipation is also noteworthy, with a rating of 45W, which allows it to sustain considerable power levels without compromising the integrity of the MOSFET or the surrounding components.

One of the key features of the NDF03N60ZG is its fast switching speed, which is essential for reducing switching losses in high-frequency operations. This makes it an ideal choice for applications such as switch-mode power supplies, power inverters, and motor control systems, where efficiency and reliability are paramount.

ON Semiconductor has equipped the NDF03N60ZG with a robust body diode, which provides fast recovery and high avalanche energy capability. This ensures that the MOSFET can handle the stress of inductive loads and the energy spikes that occur during the switching of inductive loads without suffering damage.

For ease of integration, the NDF03N60ZG comes in a TO-220 package, which is widely used and recognized in the industry for its thermal and electrical performance. The package is designed to be easily mounted onto a printed circuit board and is compatible with standard soldering techniques, making it a flexible choice for both prototyping and mass production.

Overall, the NDF03N60ZG from ON Semiconductor is a reliable and efficient solution for designers looking to optimize their power circuits for better performance and energy savings.

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Pricing & Ordering

Quantity Unit Price Ext. Price
110+ $0.5368 $59.0480
265+ $0.4405 $116.7325
410+ $0.4268 $174.9880
560+ $0.4130 $231.2800
725+ $0.3993 $289.4925
970+ $0.3580 $347.2600
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 20,000 pieces
MOQ: 110 pcs
Order Increment : 1 pcs
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