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NDS0610-G

Part No NDS0610-G
Manufacturer ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description FET -60V 10.0 MOHM SOT23
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Estimated Pruduction Lead Time 30 Weeks
Features P-Channel 60 V 120mA (Ta) 360mW (Ta) Surface Mount SOT-23-3
Manufacturer ON Semiconductor
Package Reel - TR
Operating Temperature Range -55°C ~ 150°C (TJ)
Mounting Surface Mount
Package TO-236-3, SC-59, SOT-23-3
Case / Package SOT-23-3
Family Name NDS061
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.21.0095
Quantity per package 3000
Popularity High
Supply and Demand Status Balance
Win Source Part Number 929086-NDS0610-G
Ultra Librarian 3D Model Ultra Librarian NDS0610-G CAD Model

Description

The ON Semiconductor NDS0610-G is a high-performance P-Channel MOSFET that offers efficient power management for a wide array of electronic applications. Designed with state-of-the-art technology, this MOSFET is a testament to ON Semiconductor's commitment to providing energy-efficient solutions to the electronics industry.

With its compact SOT-23 package, the NDS0610-G is ideal for space-constrained applications, ensuring a minimal footprint without compromising on performance. This MOSFET is capable of handling continuous drain currents up to -1.3 A and boasts a low on-resistance of 400 mOhms at a VGS of -4.5V. Such specifications make it an excellent choice for load switch and power management applications where efficiency is paramount.

The NDS0610-G operates at an enhanced VGS(th) of -0.8 V, which allows for low threshold voltage applications. It also features fast switching speeds, which is a critical parameter for high-frequency circuits. This makes it suitable for a variety of applications, including but not limited to, battery management systems, power supply circuits, and load switches in portable devices.

Robustness is another key feature of the NDS0610-G. It can withstand a maximum drain-source voltage (VDS) of -50 V, providing a considerable margin for voltage spikes and transients that are common in electronic circuits. Additionally, the device has an integrated gate-source ESD protection diode, which enhances its durability by protecting against electrostatic discharge events during handling and operation.

To ensure reliability across different environmental conditions, the NDS0610-G is characterized for operation from -55°C to 150°C. This wide temperature range ensures that the MOSFET can be used in both commercial and industrial applications without performance degradation.

In summary, the ON Semiconductor NDS0610-G is a versatile and robust P-Channel MOSFET that provides designers with a reliable and efficient power switching solution. Its combination of low on-resistance, high voltage threshold, and compact packaging makes it a prime choice for modern electronic applications seeking to optimize power usage and extend battery life.

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Pricing & Ordering

Quantity Unit Price Ext. Price
900+ $0.0644 $57.9600
2,185+ $0.0529 $115.5865
3,390+ $0.0512 $173.5680
4,665+ $0.0496 $231.3840
6,025+ $0.0480 $289.2000
8,065+ $0.0430 $346.7950
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 3,240 pieces
MOQ: 900 pcs
Order Increment : 1 pcs
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