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NGTB50N120FL2WG

Part No NGTB50N120FL2WG
Manufacturer ON Semiconductor
Catalog IGBTs - Single
Description IGBT 1200V 100A 535W TO247
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Estimated Pruduction Lead Time 51 Weeks
Features IGBT Trench Field Stop 1200 V 100 A 535 W Through Hole TO-247
Manufacturer ON Semiconductor
Package Tube
Operating Temperature Range -55°C ~ 175°C (TJ)
Mounting Through Hole
Package TO-247-3
Case / Package TO-247
Family Name NGTB50
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Quantity per package 30
Popularity Medium
Supply and Demand Status Limited
Win Source Part Number 887244-NGTB50N120FL2WG
Ultra Librarian 3D Model Ultra Librarian NGTB50N120FL2WG CAD Model

Description

ON Semiconductor NGTB50N120FL2WG IGBT Overview

The ON Semiconductor NGTB50N120FL2WG is a high-performance insulated gate bipolar transistor (IGBT) designed for a wide array of power applications. This IGBT is engineered to combine the high-efficiency and fast-switching speed of MOSFETs with the high-voltage and high-current handling capabilities of bipolar transistors. The NGTB50N120FL2WG is a testament to ON Semiconductor's commitment to providing energy-efficient solutions that meet the demands of modern electronic systems.

Key Features

  • High Current Capability: The device is rated to handle a continuous collector current (I<sub>c) of 50A, making it suitable for high-power applications.
  • High Voltage Rating: With a collector-emitter voltage (V<sub>ce) of 1200V, this IGBT can be used in circuits with high voltage requirements.
  • Low On-State Voltage Drop: The low V<sub>ce(on) reduces on-state power dissipation, enhancing overall efficiency.
  • Fast Switching Speed: The device offers fast switching characteristics, which are crucial for reducing switching losses and improving performance in high-frequency applications.
  • Co-Packaged Free Wheeling Diode: Comes with an integrated fast recovery diode, which provides protection against reverse voltage transients and reduces component count in the circuit design.

Applications

The NGTB50N120FL2WG's robustness and efficiency make it an ideal choice for a variety of applications, including:

  • Uninterruptible Power Supplies (UPS)
  • Motor Drives
  • Inductive Heating
  • Power Factor Correction (PFC) Circuits
  • Switched Mode Power Supplies (SMPS)

Reliability and Performance

ON Semiconductor's NGTB50N120FL2WG is built to ensure reliability and longevity under harsh conditions. The device features a rugged, co-packaged design and is characterized by its low thermal resistance, which contributes to a lower junction temperature during operation. This, in turn, translates into a longer operational life and consistent performance over time.

Environmental Compliance

Committed to environmental sustainability, ON Semiconductor ensures that the NGTB50N120FL2WG complies with RoHS directives, making it a suitable choice for eco-conscious applications that require compliance with global environmental standards.

Overall, the NGTB50N120FL2WG from ON Semiconductor is a powerful and reliable IGBT that offers a blend of efficiency, speed, and high-voltage capability, making it a versatile component for modern power electronic designs.

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Pricing & Ordering

Quantity Unit Price Ext. Price
2+ $25.6120 $51.2240
5+ $21.0150 $105.0750
8+ $20.3583 $162.8664
11+ $19.7015 $216.7165
14+ $19.0448 $266.6272
18+ $17.0747 $307.3446
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 4,560 pieces
MOQ: 2 pcs
Order Increment : 1 pcs
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