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NRVTS8120EMFST1G

Part No NRVTS8120EMFST1G
Manufacturer ON Semiconductor
Catalog Diodes, Rectifiers - Single
Description DIODE SCHOTTKY 120V 8A 5DFN / Diode 120 V 8A Surface Mount 5-DFN (5x6) (8-SOFL)
Datasheet
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products - Diodes - Rectifiers - Single Diodes
Mfr onsemi
Series Automotive, AEC-Q101
Package Tape & Reel
Product Status Active
Technology Schottky
Voltage - DC Reverse (Vr) (Max) 120 V
Current - Average Rectified (Io) 8A
Voltage - Forward (Vf) (Max) @ If 880 mV @ 8 A
Speed Fast Recovery =< 500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr 50 µA @ 120 V
Capacitance @ Vr, F -
Mounting Type Surface Mount
Package / Case 8-PowerTDFN, 5 Leads
Supplier Device Package 5-DFN (5x6) (8-SOFL)
Operating Temperature - Junction -55°C ~ 175°C
Base Product Number NRVTS8120
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.10.0080
Win Source Part Number 1354687-NRVTS8120EMFST1G
Ultra Librarian 3D Model Ultra Librarian NRVTS8120EMFST1G CAD Model

Description

The ON Semiconductor NRVTS8120EMFST1G is a high-performance, energy-efficient N-channel Power MOSFET designed for a wide range of applications. This advanced power device is optimized for fast switching performance and low on-resistance, making it an ideal choice for power management tasks within both industrial and consumer electronic devices.

Key Features

  • Low On-Resistance: The NRVTS8120EMFST1G boasts an exceptionally low on-resistance, which significantly reduces power losses during operation, enhancing overall system efficiency.
  • High Switching Speed: Engineered for rapid switching, this MOSFET facilitates high-speed operation, which is crucial for reducing switching losses and improving performance in applications such as DC-DC converters, motor drives, and power supplies.
  • Advanced Technology: Utilizing ON Semiconductor's latest trench technology, the device achieves superior electrical characteristics, including low gate charge and low threshold voltage.
  • Robust Thermal Performance: The NRVTS8120EMFST1G is encapsulated in a compact surface-mount package that offers excellent thermal performance, ensuring reliability even under high-temperature operating conditions.
  • Environmentally Friendly: This product is completely lead-free and RoHS compliant, minimizing the environmental impact and meeting the requirements for environmentally conscious product design.

Applications

The versatile nature of the NRVTS8120EMFST1G MOSFET makes it suitable for a variety of applications, including:

  • Power Supply Circuits
  • DC-DC Converters
  • Motor Control Systems
  • Computing and Server Systems
  • Lighting and LED Drivers
  • Automotive Electronics
  • Telecommunication Equipment

Product Specifications

Parameter Value Drain-to-Source Voltage (V<sub>DS) 100 V Continuous Drain Current (I<sub>D) 8 A Power Dissipation (P<sub>D) 1.56 W Operating Temperature Range -55°C to +150°C

With its robust design, high efficiency, and compliance with environmental standards, the ON Semiconductor NRVTS8120EMFST1G is a reliable and sustainable choice for modern electronic systems demanding high-performance power management solutions.

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Pricing & Ordering

Quantity Unit Price Ext. Price
135+ $0.4291 $57.9285
330+ $0.3522 $116.2260
510+ $0.3411 $173.9610
700+ $0.3301 $231.0700
905+ $0.3192 $288.8760
1,215+ $0.2861 $347.6115
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 700 pieces
MOQ: 135 pcs
Order Increment : 1 pcs
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