The NSBA115EDXV6T1G is a state-of-the-art bipolar junction transistor (BJT) from ON Semiconductor, a leading provider of semiconductor-based solutions. This PNP transistor is designed for high-performance switching and amplification applications, delivering reliable and efficient operation in a compact SOT-563 package.

Key Features

• High Current Gain: The NSBA115EDXV6T1G boasts a high current gain (hFE), which ensures efficient current amplification in circuits, making it ideal for high-density PCB applications.
• Low VCE(sat): The device offers a low collector-emitter saturation voltage, reducing power loss and improving overall efficiency in switching applications.
• High Collector Current: With the ability to handle a high collector current (IC), this transistor can manage significant loads, suitable for a wide range of electronic devices.
• RoHS Compliant: Adhering to environmental standards, the NSBA115EDXV6T1G is RoHS compliant, minimizing the use of hazardous substances in electronic components.
• Compact Footprint: The small SOT-563 package is designed for minimal space usage on printed circuit boards, allowing for high-density component placement.

Applications

The NSBA115EDXV6T1G is versatile and can be used in various applications, including:

• Power management circuits
• Signal amplification
• Switching regulators
• Motor control drivers
• Audio amplifiers

Technical Specifications

Parameter Value Transistor Polarity PNP Collector-Emitter Voltage (VCEO) 50V Collector Current (IC) 500mA Power Dissipation (Pd) 225mW DC Current Gain (hFE) 120 to 220 Operating Temperature Range -55°C to +150°C

The NSBA115EDXV6T1G from ON Semiconductor is an excellent choice for designers looking for a reliable PNP transistor capable of delivering high performance in a variety of electronic applications.