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NSCT3904LT1G

Part No NSCT3904LT1G
Manufacturer ON Semiconductor
Catalog Transistors (BJT) - Single
Description TRANS NPN 40V 0.2A SOT-23
Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Reel - TR
Status Obsolete(EOL)
Transistor Polarity NPN
Maximum Current Collector 200mA
VCEO Maximum Collector-Emitter Breakdown Voltage 40V
Max Vce (sat) 300mV @ 5mA, 50mA
Typical Gain (hFE) (Min) 100 @ 10mA, 1V
Maximum Power Dissipation 225mW
Frequency - Transition 300MHz
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package SOT-23-3 (TO-236)
Win Source Part Number 045375-NSCT3904LT1G
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian NSCT3904LT1G CAD Model

Description

ON Semiconductor NSCT3904LT1G - NPN Bipolar Junction Transistor

The NSCT3904LT1G from ON Semiconductor is a high-performance NPN bipolar junction transistor (BJT) that offers a blend of low power consumption and high efficiency, making it an ideal choice for a wide range of electronic applications. This versatile transistor is designed to support the needs of modern electronics where space is at a premium and power efficiency is crucial.

With its compact SOT-23 package, the NSCT3904LT1G is designed for surface mount technology (SMT), allowing for high-density PCB designs and easy integration into automated manufacturing processes. The small footprint of the device ensures that it can be used in applications where board space is limited, without compromising performance.

The NSCT3904LT1G features a collector-emitter voltage (V<sub>CEO) of 40V and a collector current capability of up to 200 mA, making it suitable for driving small loads in a variety of circuits. The device also boasts a collector-base voltage (V<sub>CBO) of 60V and an emitter-base voltage (V<sub>EBO) of 6V, providing a good safety margin for most applications.

One of the key advantages of this transistor is its low collector-emitter saturation voltage, which results in reduced power dissipation and improved energy efficiency in switching applications. This feature, along with its high current gain bandwidth product, makes the NSCT3904LT1G an excellent choice for amplification and switching tasks in consumer electronics, industrial control systems, and power management circuits.

ON Semiconductor's commitment to quality ensures that the NSCT3904LT1G meets stringent reliability standards, providing a robust and durable component for your electronic designs. Whether you're working on a new design or updating an existing one, the NSCT3904LT1G offers the performance and reliability you need in a compact and power-efficient package.

In summary, the NSCT3904LT1G is a versatile NPN transistor that stands out for its efficiency, reliability, and space-saving design, making it a go-to component for a multitude of electronic applications.

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