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NSS20600CF8T1G

Part No NSS20600CF8T1G
Manufacturer ON Semiconductor
Catalog Transistors (BJT) - Single
Description TRANS PNP 20V 6A CHIPFET
Datasheet
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single Bipolar Transistors
Mfr onsemi
Series -
Package Tape & Reel
Product Status Obsolete
Transistor Type PNP
Current - Collector (Ic) (Max) 6 A
Voltage - Collector Emitter Breakdown (Max) 20 V
Vce Saturation (Max) @ Ib, Ic 200mV @ 400mA, 4A
Current - Collector Cutoff (Max) 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 220 @ 1A, 2V
Power - Max 830 mW
Frequency - Transition 100MHz
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Package / Case 8-SMD, Flat Lead
Supplier Device Package ChipFET™
Base Product Number NSS206
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.21.0075
Win Source Part Number 1379375-NSS20600CF8T1G
Ultra Librarian 3D Model Ultra Librarian NSS20600CF8T1G CAD Model

Description

ON Semiconductor NSS20600CF8T1G Overview

The ON Semiconductor NSS20600CF8T1G is a high-performance, NPN Silicon Transistor designed for use in a variety of electronic applications. This versatile component is an essential building block in modern electronics, thanks to its robust design and reliable performance. The NSS20600CF8T1G is well-suited for linear and switching applications, making it an excellent choice for designers and engineers looking to enhance the functionality and efficiency of their electronic products.

Key Features

  • High Current Capability: The NSS20600CF8T1G boasts a collector current of up to 2 A, which makes it capable of handling high-current applications with ease.
  • High Collector-Emitter Breakdown Voltage: With a collector-emitter voltage (VCEO) of 60 V, it offers a good margin for a variety of circuit designs, providing stable performance under different operating conditions.
  • Low Collector-Emitter Saturation Voltage: This feature ensures efficient operation by minimizing power loss when the transistor is in the 'on' state, contributing to the overall energy efficiency of the system.
  • High Power Dissipation: The device is capable of dissipating up to 25 W of power, allowing it to handle relatively high levels of power within its compact form factor.
  • Surface Mount Package: The SOT-223 package is designed for optimal board space utilization, making it a great fit for space-constrained applications without compromising on power handling capabilities.

Applications

The NSS20600CF8T1G is suitable for a wide range of applications, including, but not limited to:

  • Power management circuits
  • DC-DC converters
  • Motor control circuits
  • Audio amplifiers
  • Signal amplification
  • Switching regulators
  • General-purpose switching and amplification

With its combination of high current handling, voltage capability, and power dissipation, the NSS20600CF8T1G from ON Semiconductor is a reliable choice for engineers looking to create efficient and durable electronic systems. Its compact surface mount design allows for efficient use of PCB space, making it a versatile solution for a multitude of electronic designs.

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Pricing & Ordering

Quantity Unit Price Ext. Price
170+ $0.3456 $58.7520
410+ $0.2836 $116.2760
635+ $0.2748 $174.4980
870+ $0.2659 $231.3330
1,125+ $0.2570 $289.1250
1,505+ $0.2305 $346.9025
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 2,880 pieces
MOQ: 170 pcs
Order Increment : 1 pcs
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