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NSTR4501NT1G

Part No NSTR4501NT1G
Manufacturer ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 20V 3.2A SOT23-3
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 3.2A (Ta)
Gate-Source Threshold Voltage 1.2V @ 250μA
Max Gate Charge 6nC @ 4.5V
Max Input Capacitance 200pF @ 10V
Maximum Rds On at Id,Vgs 80 mOhm @ 3.6A, 4.5V
Mounting SMD (SMT)
Case / Package SOT-23-3
Dimension TO-236-3, SC-59, SOT-23-3
Win Source Part Number 1083651-NSTR4501NT1G
Popularity Medium
Supply and Demand Status Balance
Application Field Used in Power Management, Portable Devices, Computers & Computer Peripherals
Ultra Librarian 3D Model Ultra Librarian NSTR4501NT1G CAD Model

Description

ON Semiconductor NSTR4501NT1G - High-Performance P-Channel MOSFET

The NSTR4501NT1G is a state-of-the-art P-Channel MOSFET brought to you by ON Semiconductor, a leading name in power and signal management. This compact and efficient MOSFET is designed to meet the requirements of a wide range of electronic applications, offering superior power control in a small footprint.

With its low threshold voltage, the NSTR4501NT1G ensures a low on-state resistance while maintaining high switching speeds, making it an ideal choice for power management tasks. The device is capable of handling continuous drain currents up to 4.9 A, and its power dissipation is rated at 1.25 W, which allows for reliable operation in demanding situations.

One of the key features of the NSTR4501NT1G is its small SOT-23 package, which is perfect for space-constrained applications. Despite its small size, this MOSFET does not compromise on performance, providing robust thermal characteristics and high efficiency. The device also boasts a drain-source breakdown voltage of -30 V, offering a good safety margin for various circuit designs.

The NSTR4501NT1G is designed with ON Semiconductor's advanced trench technology, which reduces the on-resistance and minimizes gate charge to enhance the overall efficiency of your circuit. This makes it an excellent choice for load switch applications, power management in portable devices, and other applications that require high-speed switching and low voltage operation.

Furthermore, the NSTR4501NT1G is fully RoHS compliant and halogen-free, ensuring that it meets the latest environmental standards for electronic components. This commitment to sustainability, combined with the device's high performance, makes the NSTR4501NT1G a responsible and forward-thinking choice for designers and manufacturers looking to create eco-friendly products without sacrificing quality or efficiency.

In summary, the NSTR4501NT1G from ON Semiconductor is a versatile and reliable P-Channel MOSFET that provides excellent performance in a compact package, suitable for a diverse range of applications where power efficiency and space savings are critical.

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Pricing & Ordering

Quantity Unit Price Ext. Price
330+ $0.1764 $58.2120
800+ $0.1448 $115.8400
1,240+ $0.1402 $173.8480
1,705+ $0.1358 $231.5390
2,205+ $0.1312 $289.2960
2,950+ $0.1176 $346.9200
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 16,000 pieces
MOQ: 330 pcs
Order Increment : 1 pcs
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