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NTB10N60

Part No NTB10N60
Manufacturer ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description N-CHANNEL  POWER MOSFET
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr ON Semiconductor
Series *
Package Bulk
Product Status Active
Standard Package 450 pcs
MSL Level 1 (Unlimited)
REACH Status REACH Affected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1082900-NTB10N60
Ultra Librarian 3D Model Ultra Librarian NTB10N60 CAD Model

Description

ON Semiconductor NTB10N60 Power MOSFET

The NTB10N60 from ON Semiconductor is a high-performance, N-channel Power MOSFET designed to meet the rigorous demands of today's power electronic applications. This device is part of ON Semiconductor's portfolio of energy-efficient power management components, engineered to provide reliable and robust performance in a wide range of applications. The NTB10N60 is suitable for use in power supplies, converters, motor drives, and other power switching applications where efficiency and reliability are critical.

Key Features

  • High Voltage Capability: The NTB10N60 is rated for a drain-to-source voltage (V<sub>DS) of 600V, making it suitable for high voltage applications.
  • Low On-Resistance: With a typical on-resistance (R<sub>DS(on)) of just 0.75Ω, this MOSFET ensures minimal power loss during operation, leading to improved overall efficiency.
  • High Continuous Current: It can handle a continuous drain current (I<sub>D) of up to 10A, providing ample current handling capability for a variety of applications.
  • Fast Switching: The device boasts a fast switching speed, which is essential for reducing switching losses and improving performance in high-frequency power conversion systems.
  • Robust Thermal Performance: The NTB10N60 is encapsulated in a TO-220 package, known for its excellent thermal characteristics, ensuring stability and longevity even under thermal stress.

Applications

  • Switch Mode Power Supplies (SMPS)
  • Uninterruptible Power Supplies (UPS)
  • DC-AC Inverters for Solar Power Systems
  • High-Efficiency DC-DC Converters
  • Motor Control Circuits

The NTB10N60 incorporates advanced silicon technology to provide high avalanche energy absorption capability and free-wheeling diodes, which are crucial for safe operation under abnormal conditions like load dump in automotive environments. This device is also characterized by a low gate charge (Q<sub>G), which reduces the power required to drive the MOSFET, further enhancing the energy efficiency of the overall system.

ON Semiconductor's commitment to quality ensures that the NTB10N60 meets the stringent requirements for performance and reliability. Whether you're designing a new system or upgrading an existing one, the NTB10N60 Power MOSFET is an excellent choice for high-efficiency power management solutions.

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