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NTB125N02RG

Part No NTB125N02RG
Manufacturer ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 24V 15.9A D2PAK
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 24V
Continuous Drain Current at 25°C 95A (Ta), 120.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2V @ 250μA
Max Gate Charge 28nC @ 4.5V
Max Input Capacitance 3440pF @ 20V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 1.98W (Ta), 113.6W (Tc)
Maximum Rds On at Id,Vgs 4.6 mOhm @ 20A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package D2PAK
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 1083683-NTB125N02RG
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian NTB125N02RG CAD Model

Description

ON Semiconductor NTB125N02RG MOSFET Overview

The NTB125N02RG from ON Semiconductor is a high-performance N-Channel Power MOSFET designed to meet the rigorous demands of a wide array of electronic applications. This MOSFET utilizes advanced PowerTrench technology that ensures it delivers not only superior switching performance but also low on-resistance and a high degree of reliability.

Key Features

  • Low R<sub>DS(on): The device boasts an exceptionally low on-state resistance, which translates into reduced conduction losses and improved overall efficiency in applications.
  • High Current Capability: With a continuous drain current of 87A, the NTB125N02RG is capable of handling high current loads, making it suitable for power-intensive applications.
  • PowerTrench® Technology: ON Semiconductor's proprietary PowerTrench technology enhances the device's switching speed and reduces gate charge, leading to lower switching losses.
  • High Performance: The MOSFET is designed to deliver high-speed switching performance, which is critical for reducing energy waste in power conversion systems.
  • Thermal Management: The NTB125N02RG is housed in a TO-263 package which is known for excellent thermal performance, ensuring the device operates within its temperature range even under high load conditions.

Applications

The NTB125N02RG MOSFET is versatile and can be used in a variety of applications including:

  • DC/DC converters
  • Motor drives
  • Power management systems
  • Automotive applications
  • Switching regulators
  • Power supplies

Specifications

Parameter Value Drain-to-Source Voltage (V<sub>DSS) 20V Continuous Drain Current (I<sub>D) 87A Power Dissipation (P<sub>D) 125W R<sub>DS(on) 2.5mΩ (max) Operating Temperature Range -55°C to +175°C

With its robust design and cutting-edge technology, the NTB125N02RG from ON Semiconductor is an excellent choice for designers looking for a reliable and efficient solution for their power switching needs.

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