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NTB18N06LT4

Part No NTB18N06LT4
Manufacturer ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 60V 15A D2PAK
Datasheet
Sample
Rohs State Need to verify
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 60V
Continuous Drain Current at 25°C 15A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 5V
Gate-Source Threshold Voltage 2V @ 250μA
Max Gate Charge 20nC @ 5V
Max Input Capacitance 440pF @ 25V
Maximum Gate-Source Voltage ±10V
Power Dissipation (Max) 48.4W (Tc)
Maximum Rds On at Id,Vgs 100 mOhm @ 7.5A, 5V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package D2PAK
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 099496-NTB18N06LT4
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian NTB18N06LT4 CAD Model

Description

ON Semiconductor NTB18N06LT4 Power MOSFET

The NTB18N06LT4 from ON Semiconductor is a high-performance Power MOSFET that is designed to meet a wide range of applications demanding high efficiency and power density. This device is part of ON Semiconductor's Trench Power MOSFETs, which are known for their low on-state resistance and high switching performance.

The NTB18N06LT4 is characterized by its N-channel configuration and utilizes a robust and reliable Trench technology. It is capable of handling a continuous drain current of 18A, which makes it suitable for high current applications. The device features a drain-to-source voltage (V<sub>DS) of 60V, providing a good margin for typical 48V systems and other applications that require a moderate voltage range.

One of the key benefits of the NTB18N06LT4 is its low on-state resistance (R<sub>DS(on)), which is typically 0.045Ω. This low resistance ensures efficient power handling and minimizes power losses, leading to improved overall system efficiency. Additionally, the device has a low gate charge (Q<sub>G), which translates into faster switching speeds and further reduces power losses during the switching process.

The NTB18N06LT4 is housed in a D2PAK package, which is known for its high power dissipation capability. This package provides excellent thermal performance and is suitable for surface mount technology (SMT), which simplifies the assembly process and allows for compact design in end applications.

Applications for the NTB18N06LT4 are diverse and include power supply circuits, DC-DC converters, motor drives, and other power management tasks in consumer, automotive, and industrial electronics. Its reliability and performance make it an excellent choice for designers looking to optimize their power systems for efficiency and longevity.

Overall, the NTB18N06LT4 is a testament to ON Semiconductor's commitment to providing high-quality components that push the boundaries of power management technology, helping engineers to create more energy-efficient and robust products for the modern world.

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