ON Semiconductor NTB190N65S3HF Power MOSFET

The NTB190N65S3HF from ON Semiconductor is a state-of-the-art power MOSFET designed for high-efficiency power conversion applications. This device is part of ON Semiconductor's high-performance N-channel MOSFETs, which utilize their proprietary silicon technology to deliver exceptional power density and reliability.

Key Features

• High Voltage Capability: With a drain-to-source voltage (V<sub>DS) of 650V, the NTB190N65S3HF can handle high voltage requirements with ease, making it suitable for a wide range of power applications.
• Low On-Resistance: A low R<sub>DS(on) of 0.190Ω minimizes conduction losses, which is critical for improving the efficiency of power conversion systems.
• High Continuous Current: The device is capable of a continuous drain current (I<sub>D) of 58A at 25°C, ensuring robust performance for high current applications.
• Fast Switching Performance: Its fast switching capabilities enhance performance in applications that require high-speed operation.
• Robust Body Diode: The MOSFET features a rugged intrinsic body diode that can handle high-speed switching and hard commutation with ease.

Applications

The NTB190N65S3HF is ideal for a variety of applications, including:

• Power supplies for servers, telecom, and data centers
• Uninterruptible power supplies (UPS)
• Switched-mode power supplies (SMPS)
• Power factor correction (PFC) circuits
• Industrial power applications such as welding, induction heating, and motor drives

Package and Reliability

The NTB190N65S3HF comes in a TO-263 (D2PAK) package, which offers a compact footprint while allowing for excellent thermal management. ON Semiconductor's commitment to quality ensures that the NTB190N65S3HF meets rigorous industry standards for reliability and performance, making it a trusted choice for engineers and designers seeking to optimize their power systems.