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NTB60N06LT4G

Part No NTB60N06LT4G
Manufacturer ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 60V 60A D2PAK
Datasheet
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Rohs State rohs
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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 60V
Continuous Drain Current at 25°C 60A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 5V
Gate-Source Threshold Voltage 2V @ 250μA
Max Gate Charge 65nC @ 5V
Max Input Capacitance 3075pF @ 25V
Maximum Gate-Source Voltage ±15V
Power Dissipation (Max) 2.4W (Ta), 150W (Tj)
Maximum Rds On at Id,Vgs 16 mOhm @ 30A, 5V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package D2PAK
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 1083709-NTB60N06LT4G
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian NTB60N06LT4G CAD Model

Description

ON Semiconductor NTB60N06LT4G MOSFET

The NTB60N06LT4G is a high-performance Power MOSFET brought to you by ON Semiconductor, a trusted leader in innovative energy-efficient power and signal management devices. Designed for a wide range of applications, this N-channel MOSFET is a testament to ON Semiconductor's commitment to providing advanced solutions that meet the needs of modern electronic circuits.

This robust MOSFET features a 60V drain-to-source breakdown voltage (V<sub>DS), which makes it suitable for high-voltage switching applications. With a continuous drain current (I<sub>D) of 60A, the NTB60N06LT4G can handle significant power, making it an excellent choice for power supply systems, motor drives, and other high-current applications.

The NTB60N06LT4G boasts a low on-state resistance (R<sub>DS(on)) of just 6.5mΩ. This low R<sub>DS(on) translates to reduced conduction losses, leading to higher efficiency in your circuit designs. Furthermore, with a total gate charge (Q<sub>g) of 39nC, this MOSFET offers fast switching performance, which is essential for reducing switching losses and improving the overall performance of power converters and inverters.

ON Semiconductor has packaged the NTB60N06LT4G in a TO-220 package, which is widely known for its ease of mounting and good thermal performance. The TO-220 package ensures that the MOSFET can be easily integrated into various PCB designs while providing adequate heat dissipation for reliable operation even under high load conditions.

Key features of the NTB60N06LT4G include its logic level gate drive, which simplifies the drive circuitry by allowing the MOSFET to be driven directly by logic-level voltages. This feature is particularly useful in applications where space and power are at a premium. Additionally, the MOSFET is designed with ruggedized device technology, which enhances its durability and reliability, ensuring a long operational life in challenging environments.

In summary, the NTB60N06LT4G from ON Semiconductor is a high-quality, efficient, and reliable component that is ideal for designers looking to improve the performance of their power management systems. Its combination of high-voltage capability, low on-resistance, and fast switching makes it a versatile choice for a multitude of applications.

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Pricing & Ordering

Quantity Unit Price Ext. Price
185+ $0.3128 $57.8680
455+ $0.2566 $116.7530
700+ $0.2487 $174.0900
960+ $0.2407 $231.0720
1,245+ $0.2326 $289.5870
1,665+ $0.2086 $347.3190
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 370 pieces
MOQ: 185 pcs
Order Increment : 1 pcs
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