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NTBGS2D5N06C

Part No NTBGS2D5N06C
Manufacturer ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description POWER MOSFET, 60 V, 2.5 M?, 224  /  N-Channel 60 V 27A (Ta), 169A (Tc) 3.7W (Ta), 136W (Tc) Surface Mount D2PAK (TO-263)
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Rohs State rohs
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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr onsemi
Package Tape & Reel
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V
Current - Continuous Drain (Id) @ 25°C 27A (Ta), 169A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V, 12V
Rds On (Max) @ Id, Vgs 2.5mOhm @ 35A, 12V
Vgs(th) (Max) @ Id 4V @ 175µA
Gate Charge (Qg) (Max) @ Vgs 45.4 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 3510 pF @ 30 V
Power Dissipation (Max) 3.7W (Ta), 136W (Tc)
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting SMD (SMT)
Supplier Device Package D2PAK (TO-263)
Package / Case TO-263-7, D²Pak (6 Leads + Tab)
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Other Names 488-NTBGS2D5N06CTR,488-NTBGS2D5N06CDKR,488-NTBGS2D5N06CCT
Standard Package 800
Win Source Part Number 1061186-NTBGS2D5N06C
Ultra Librarian 3D Model Ultra Librarian NTBGS2D5N06C CAD Model

Description

The NTBGS2D5N06C is a high-performance, Power MOSFET brought to you by ON Semiconductor, a renowned leader in power management and precision solutions. This product is designed to cater to a wide range of applications, offering efficiency and reliability for power switching applications.

Key Features

  • Low On-Resistance: The NTBGS2D5N06C features a low on-resistance (R<sub>DS(on)), which translates to less power loss and higher efficiency during operation.
  • High Current Capability: With the ability to handle a substantial continuous drain current (I<sub>D), this MOSFET is suitable for high-current applications.
  • High-Speed Switching: Engineered for fast switching performance, this device enhances the overall speed of power conversion systems.
  • Low Threshold Voltage: The low gate threshold voltage (V<sub>GS(th)) allows for the MOSFET to be easily driven at lower voltages, making it compatible with low-voltage logic levels.
  • Robust Thermal Performance: The NTBGS2D5N06C is encapsulated in a compact, surface-mount package that provides excellent thermal performance and reduces the PCB space required.

Applications

The versatility of the NTBGS2D5N06C makes it ideal for a broad spectrum of applications. It is particularly well-suited for:

  • DC/DC Converters
  • Power Management Functions
  • Motor Control Circuits
  • Battery Powered Systems
  • Load Switching
  • High-Efficiency Power Supplies

Quality and Reliability

ON Semiconductor is committed to delivering products that meet the highest standards of quality and reliability. The NTBGS2D5N06C is no exception, as it undergoes rigorous testing and quality control measures to ensure it performs to specifications in a variety of conditions.

Environmental Considerations

With an increasing focus on environmental sustainability, the NTBGS2D5N06C is designed with eco-friendly considerations. It complies with RoHS directives, making it suitable for use in applications where environmental impact is a concern.

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