The NTD4808N-1G from ON Semiconductor is a high-performance Power MOSFET designed to meet the rigorous demands of a wide range of electronic applications. This particular MOSFET is a part of ON Semiconductor's renowned N-channel power MOSFETs, which are known for their efficiency, reliability, and cost-effectiveness.
Key Features
- Low R<sub>DS(on): The device boasts an exceptionally low on-resistance, which translates to reduced conduction losses and improved overall efficiency.
- High Current Capacity: With its ability to handle a continuous drain current of up to 30 A, the NTD4808N-1G is suitable for high-power applications.
- High Performance: This MOSFET operates at a maximum junction temperature of 175°C, ensuring performance stability under extreme conditions.
- Robust Design: The device is designed with a rugged gate oxide, which provides advanced protection against gate stress and ensures a longer operational life.
Applications
The NTD4808N-1G is a versatile component that can be used in a variety of applications, including:
- DC/DC converters
- Power management systems
- Motor drives
- Computing and server power supplies
- Automotive applications
- Switching circuits
Specifications
Parameter
Value
V<sub>DSS
30V
I<sub>D
30A
R<sub>DS(on)
7.5mΩ
Package
TO-252 (DPAK)
Quality and Environmental Compliance
The NTD4808N-1G is RoHS compliant and is manufactured under ON Semiconductor's stringent quality control standards, ensuring both reliability and environmental friendliness.
Conclusion
With its robust design, high efficiency, and versatile application range, the NTD4808N-1G Power MOSFET from ON Semiconductor is an excellent choice for designers looking to optimize their power management systems. Its advanced features and compliance with environmental standards make it a responsible and forward-thinking choice for modern electronic designs.