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NTD4810NT4G

Part No NTD4810NT4G
Manufacturer ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 9A DPAK
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 9A (Ta), 54A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 11.5V
Gate-Source Threshold Voltage 2.5V @ 250μA
Max Gate Charge 11nC @ 4.5V
Max Input Capacitance 1350pF @ 12V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 1.4W (Ta), 50W (Tc)
Maximum Rds On at Id,Vgs 10 mOhm @ 30A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package DPAK
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 004165-NTD4810NT4G
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian NTD4810NT4G CAD Model

Description

ON Semiconductor NTD4810NT4G MOSFET

The ON Semiconductor NTD4810NT4G is a high-performance, N-Channel Power MOSFET designed for a variety of applications that demand high efficiency and power density. This state-of-the-art MOSFET utilizes ON Semiconductor's latest trench technology to provide superior switching performance and enhanced power handling capabilities.

Key Features:

  • Low On-Resistance: The NTD4810NT4G features a low on-resistance (R<sub>DS(on)), which minimizes conduction losses and improves overall efficiency, making it ideal for power-intensive applications.
  • High Current Capacity: With the ability to handle continuous drain currents (I<sub>D) up to 30A, this MOSFET can manage high current loads with ease, ensuring reliable operation under demanding conditions.
  • High Switching Speed: The fast switching speed of this MOSFET reduces switching losses and enables high-frequency operation, which is crucial for applications such as switching power supplies and DC-DC converters.
  • Enhanced Thermal Performance: The NTD4810NT4G comes in a surface-mount DPAK package, which provides excellent thermal transfer and helps to maintain a lower operating temperature, extending the life of the product.
  • Robust Design: Engineered to withstand high energy pulses in the avalanche and commutation modes, this MOSFET is well-suited for rugged applications.
  • Low Gate Charge: The reduced gate charge (Q<sub>g) facilitates efficient gate drive performance, which is beneficial in reducing switching-related power losses.

Applications:

The versatility of the NTD4810NT4G makes it suitable for a wide array of applications, including:

  • Power Supply Circuits
  • DC-DC Converters
  • Motor Control Systems
  • Automotive Applications
  • Power Management Solutions

Whether you're designing for industrial, automotive, or consumer electronics, the ON Semiconductor NTD4810NT4G MOSFET offers the reliability and performance needed to deliver efficient and compact power solutions. Its advanced technology and robust design make it a top choice for engineers looking to optimize their power systems.

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Pricing & Ordering

Quantity Unit Price Ext. Price
345+ $0.1686 $58.1670
835+ $0.1386 $115.7310
1,295+ $0.1340 $173.5300
1,790+ $0.1294 $231.6260
2,295+ $0.1259 $288.9405
3,095+ $0.1120 $346.6400
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 2,850 pieces
MOQ: 345 pcs
Order Increment : 1 pcs
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