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NTD4813N-35G

Part No NTD4813N-35G
Manufacturer ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 7.6A IPAK
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 7.6A (Ta), 40A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 11.5V
Gate-Source Threshold Voltage 2.5V @ 250μA
Max Gate Charge 7.9nC @ 4.5V
Max Input Capacitance 860pF @ 12V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 1.27W (Ta), 35.3W (Tc)
Maximum Rds On at Id,Vgs 13 mOhm @ 30A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package I-Pak
Dimension TO-251-3 Stub Leads, IPak
Win Source Part Number 1083798-NTD4813N-35G
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian NTD4813N-35G CAD Model

Description

ON Semiconductor NTD4813N-35G Power MOSFET

The NTD4813N-35G is a high-performance Power MOSFET brought to you by ON Semiconductor, a renowned leader in the semiconductor industry. This device is designed to meet a wide array of power management and switching applications, offering a perfect solution for engineers looking to enhance system performance while maintaining energy efficiency.

Constructed using ON Semiconductor's advanced technology, the NTD4813N-35G boasts an exceptionally low on-resistance (R<sub>DS(on)) which significantly reduces conduction losses. This feature, combined with a 30V drain-to-source voltage (V<sub>DS), makes it an ideal choice for high-efficiency power applications. The device is capable of handling continuous drain currents up to 22A, ensuring reliable operation even under heavy load conditions.

The NTD4813N-35G comes in a compact and robust surface-mount package, specifically the DPAK (TO-252) variant, which is known for its excellent thermal performance. This package is not only space-efficient but also simplifies the PCB mounting process, making it a convenient option for modern compact electronics.

Key features of the NTD4813N-35G include:

  • Low R<sub>DS(on) to minimize conduction losses
  • High continuous drain current (I<sub>D) of 22A
  • Drain-to-source voltage (V<sub>DS) of 30V suitable for a variety of applications
  • Fast switching performance for efficient operation
  • High power and current handling capability
  • Robust thermal performance with DPAK (TO-252) package

Applications that can benefit from the NTD4813N-35G include DC/DC converters, power supply units, motor drives, and other power-intensive circuits where efficient energy management is crucial. Its performance characteristics also make it suitable for automotive, industrial, and consumer markets where reliability and power efficiency are of paramount importance.

With the NTD4813N-35G, ON Semiconductor continues its commitment to providing high-quality, energy-efficient solutions for a sustainable future. By choosing this Power MOSFET, designers will not only improve the performance of their applications but also contribute to the development of greener and more energy-conscious electronic products.

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