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NTD4855N-35G

Part No NTD4855N-35G
Manufacturer ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 25V 14A IPAK
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 25V
Continuous Drain Current at 25°C 14A (Ta), 98A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.5V @ 250μA
Max Gate Charge 32.7nC @ 4.5V
Max Input Capacitance 2950pF @ 12V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 1.35W (Ta), 66.7W (Tc)
Maximum Rds On at Id,Vgs 4.3 mOhm @ 30A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package I-Pak
Dimension TO-251-3 Stub Leads, IPak
Win Source Part Number 209338-NTD4855N-35G
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian NTD4855N-35G CAD Model

Description

ON Semiconductor NTD4855N-35G - Power MOSFET

The NTD4855N-35G from ON Semiconductor is a high-performance Power MOSFET designed for a variety of applications that demand high efficiency and power density. This robust component is part of ON Semiconductor's Power MOSFET portfolio and is recognized for its exceptional quality and reliability.

Featuring a 30V drain-to-source voltage (V<sub>DS) with a continuous drain current (I<sub>D) of 11A, the NTD4855N-35G is engineered to handle high-power tasks with ease. Its R<sub>DS(on) is as low as 35 mOhms at a V<sub>GS of 10V, which ensures minimal power loss during operation and enhances overall efficiency. This makes it an excellent choice for power management tasks where low on-resistance and high current handling are critical.

The device comes in a compact and surface-mountable SOT-223 package, which is ideal for space-constrained applications. Its small footprint does not compromise its thermal performance, thanks to the power dissipation capability of 2.5W, which helps to maintain optimal operating temperatures.

ON Semiconductor's NTD4855N-35G is designed with advanced trench technology that not only improves performance but also ensures robustness against harsh conditions. This technology contributes to the device's high avalanche energy rating, making it suitable for applications that may experience unexpected voltage spikes.

Typical applications for the NTD4855N-35G include DC/DC converters, power supply modules, motor drives, and other high-efficiency power management systems. Its fast switching speed, combined with low gate charge, makes it a preferred choice for switching applications where speed is of the essence.

In summary, the NTD4855N-35G Power MOSFET from ON Semiconductor is a high-quality, reliable component that offers excellent performance for a wide range of power applications. Its low on-resistance, high current capability, and advanced trench technology make it a versatile choice for engineers looking to optimize their power management designs.

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Pricing & Ordering

Quantity Unit Price Ext. Price
9+ $6.9543 $62.5887
21+ $5.7069 $119.8449
32+ $5.5278 $176.8896
44+ $5.3500 $235.4000
56+ $5.1721 $289.6376
75+ $4.6362 $347.7150
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 10,600 pieces
MOQ: 9 pcs
Order Increment : 1 pcs
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