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NTD4856NT4G

Part No NTD4856NT4G
Manufacturer ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 25V 13.3A DPAK
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 25V
Continuous Drain Current at 25°C 13.3A (Ta), 89A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.5V @ 250μA
Max Gate Charge 27nC @ 4.5V
Max Input Capacitance 2241pF @ 12V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 1.33W (Ta), 60W (Tc)
Maximum Rds On at Id,Vgs 4.7 mOhm @ 30A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package DPAK
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 060614-NTD4856NT4G
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian NTD4856NT4G CAD Model

Description

ON Semiconductor NTD4856NT4G - N-Channel Power MOSFET

The NTD4856NT4G is a high-performance N-Channel Power MOSFET designed and manufactured by ON Semiconductor, a renowned leader in power and signal management solutions. This power MOSFET is a testament to ON Semiconductor's commitment to providing energy-efficient devices that help reduce the global energy footprint. It is specifically engineered to address the demanding requirements of modern power management and switching applications.

With its compact and robust package, the NTD4856NT4G offers excellent thermal and electrical characteristics. It is housed in a TO-252 (DPAK) package, which is designed for surface-mount technology (SMT) and is well-suited for automated assembly processes. This packaging not only ensures a small footprint on the PCB but also provides superior heat dissipation for improved performance and reliability.

The NTD4856NT4G boasts an impressive R<sub>DS(on) value, which translates to reduced on-state resistance and lower associated power losses. This characteristic is crucial for applications that require high efficiency, such as DC-DC converters, motor drives, and power management systems. Its low gate charge and fast switching speed further enhance its performance in high-frequency circuits, making it an ideal choice for modern electronic designs.

This power MOSFET is also characterized by its high continuous drain current capability, enabling it to handle significant power levels without compromising its operational integrity. The device is designed to withstand rigorous conditions and is characterized by its high avalanche energy rating, providing a robust solution for applications that may experience unexpected voltage transients.

The NTD4856NT4G is RoHS compliant, reflecting ON Semiconductor's dedication to environmental responsibility. It does not contain any hazardous substances, making it suitable for use in a wide range of consumer and industrial products.

In summary, the NTD4856NT4G from ON Semiconductor is a high-efficiency, N-Channel Power MOSFET that offers designers a compact, thermally efficient, and reliable component for their power management solutions. Its advanced features ensure optimal performance in a variety of applications, making it a preferred choice for engineers looking to enhance the efficiency and longevity of their electronic products.

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Pricing & Ordering

Quantity Unit Price Ext. Price
3+ $20.2980 $60.8940
7+ $16.6551 $116.5857
11+ $16.1354 $177.4894
15+ $15.6144 $234.2160
20+ $15.0935 $301.8700
26+ $13.5320 $351.8320
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 13,200 pieces
MOQ: 3 pcs
Order Increment : 1 pcs
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