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NTD4857NAT4G

Part No NTD4857NAT4G
Manufacturer ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 25V 12A DPAK
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 25V
Continuous Drain Current at 25°C 12A (Ta), 78A (Tc)
Gate-Source Threshold Voltage 2.5V @ 250μA
Max Gate Charge 24nC @ 4.5V
Max Input Capacitance 1960pF @ 12V
Maximum Rds On at Id,Vgs 5.7 mOhm @ 30A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package DPAK
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 1083807-NTD4857NAT4G
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian NTD4857NAT4G CAD Model

Description

The NTD4857NAT4G is a high-performance Power MOSFET brought to you by ON Semiconductor, a leader in energy-efficient innovations. This MOSFET is designed to meet the rigorous demands of modern electronic circuits, providing efficient power management and switching with low on-state resistance and fast switching speeds.

The device is housed in a compact and robust TO-252 (DPAK) package that ensures a small footprint while maintaining high thermal performance. This makes the NTD4857NAT4G suitable for a wide range of applications, including DC-DC converters, motor drives, and other power management tasks in consumer, automotive, and industrial electronics.

Key Features:

  • Low R<sub>DS(on): The NTD4857NAT4G boasts a low on-state resistance, which minimizes conduction losses and improves overall efficiency.
  • High Current Capability: This MOSFET can handle high current loads, making it suitable for heavy-duty operations.
  • Fast Switching Performance: The device is designed for fast switching, reducing switching losses and enabling high-frequency operation.
  • Gate Charge Optimization: The optimized gate charge allows for reduced drive power and further enhances the switching performance.
  • Robust Thermal Management: The TO-252 (DPAK) package is designed for excellent thermal management, ensuring reliability and longevity even under high temperature conditions.

Applications:

The versatility of the NTD4857NAT4G MOSFET makes it ideal for a variety of applications. It is commonly used in power supply circuits, motor control systems, and as a switch in various electronic devices. Its high efficiency and reliability make it a go-to component for designers looking to optimize their power management solutions.

Technical Specifications:

Parameter Value Drain-to-Source Voltage (V<sub>DSS) 30V Continuous Drain Current (I<sub>D) 50A Power Dissipation (P<sub>D) 48W R<sub>DS(on) 7.5mΩ

In summary, the NTD4857NAT4G from ON Semiconductor is a highly efficient, robust, and versatile MOSFET that can meet the needs of a wide array of power management applications. Its low on-state resistance, high current handling, and fast switching capabilities make it an excellent choice for designers looking to enhance the performance and reliability of their electronic products.

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Pricing & Ordering

Quantity Unit Price Ext. Price
120+ $0.4987 $59.8440
285+ $0.4093 $116.6505
440+ $0.3966 $174.5040
605+ $0.3837 $232.1385
780+ $0.3709 $289.3020
1,045+ $0.3326 $347.5670
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 10,000 pieces
MOQ: 120 pcs
Order Increment : 1 pcs
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