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NTD4910NT4G

Part No NTD4910NT4G
Manufacturer ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 37A DPAK
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 8.2A (Ta), 37A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.2V @ 250μA
Max Gate Charge 15.4nC @ 10V
Max Input Capacitance 1203pF @ 15V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 1.37W (Ta), 27.3W (Tc)
Maximum Rds On at Id,Vgs 9 mOhm @ 30A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package DPAK
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 060622-NTD4910NT4G
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian NTD4910NT4G CAD Model

Description

ON Semiconductor NTD4910NT4G - Power MOSFET

The NTD4910NT4G is a high-performance Power MOSFET brought to you by ON Semiconductor, a trusted name in power management and semiconductor solutions. This device is designed to meet a wide range of applications that require low on-resistance, high switching speed, and power efficiency. The NTD4910NT4G is particularly suitable for power supply circuits, DC-DC converters, motor drives, and other power management tasks in both consumer and industrial electronics.

Key Features:

  • Low On-Resistance: The MOSFET features a low R<sub>DS(on) to minimize conduction losses, enhancing overall efficiency and performance in power switching applications.
  • High Switching Speed: Fast switching capabilities reduce transition losses and improve the MOSFET's performance in high-frequency operations.
  • Power Efficiency: Designed to optimize power usage, the NTD4910NT4G ensures reduced power dissipation, which is crucial for energy-sensitive designs.
  • Robust Thermal Performance: With excellent thermal characteristics, this MOSFET can operate reliably even under high temperature conditions, ensuring longevity and stability.
  • Gate Charge Optimization: The device has been optimized for a low total gate charge (Q<sub>G), which is beneficial for reducing switching losses, especially in applications where high switching frequencies are required.

Applications:

The versatility of the NTD4910NT4G MOSFET makes it an ideal choice for a variety of applications. It is commonly used in:

  • Power supply circuits
  • DC-DC converters
  • Motor control systems
  • Computing and server power management
  • Automotive electronics
  • LED lighting solutions

ON Semiconductor's commitment to quality ensures that the NTD4910NT4G MOSFET is a reliable component for designers and engineers looking to enhance the performance and efficiency of their electronic systems. Its advanced features and robust design make it a go-to choice for those seeking to optimize their power management solutions.

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Pricing & Ordering

Quantity Unit Price Ext. Price
18+ $3.3160 $59.6880
43+ $2.7212 $117.0116
66+ $2.6357 $173.9562
91+ $2.5514 $232.1774
118+ $2.4659 $290.9762
157+ $2.2107 $347.0799
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 12,200 pieces
MOQ: 18 pcs
Order Increment : 1 pcs
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