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NTD4963N-35G

Part No NTD4963N-35G
Manufacturer ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 8.1A IPAK
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 8.1A (Ta), 44A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.5V @ 250μA
Max Gate Charge 16.2nC @ 10V
Max Input Capacitance 1035pF @ 12V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 1.1W (Ta), 35.7W (Tc)
Maximum Rds On at Id,Vgs 9.6 mOhm @ 30A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package I-Pak
Dimension TO-251-3 Stub Leads, IPak
Win Source Part Number 1083824-NTD4963N-35G
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian NTD4963N-35G CAD Model

Description

ON Semiconductor NTD4963N-35G: Power MOSFET

The NTD4963N-35G is a high performance Power MOSFET brought to you by ON Semiconductor, a trusted leader in energy-efficient innovations. This device is designed to meet a wide range of applications, offering a robust and efficient solution for power management tasks.

The NTD4963N-35G is a N-channel transistor that delivers a continuous drain current of 30A, making it suitable for high-power applications. It operates at a standard threshold voltage, ensuring easy integration into various circuit designs. The device comes in a compact and surface-mountable TO-252 (DPAK) package, which is ideal for space-constrained applications while providing excellent thermal performance.

This Power MOSFET features a low on-resistance of just 35 mOhms, which minimizes conduction losses and improves overall efficiency. It is capable of handling a maximum drain-source voltage of 30V, providing a good balance between breakdown voltage and on-resistance, making it suitable for a wide range of power applications including DC/DC converters, motor drives, and power management in computing and telecom systems.

With a maximum operating temperature of 175°C, the NTD4963N-35G ensures reliable performance even under harsh conditions. This high threshold for thermal endurance contributes to the longevity and durability of the component, making it a preferred choice for industrial and automotive applications where reliability is critical.

ON Semiconductor's commitment to environmental stewardship is evident in the NTD4963N-35G, as it is a Pb-free and RoHS compliant component, adhering to current environmental regulations and standards. This ensures that the product is not only high-performing but also environmentally friendly.

In summary, the NTD4963N-35G from ON Semiconductor is a versatile and robust Power MOSFET that offers low on-resistance, high current capability, and excellent thermal performance, all packaged in a space-saving DPAK package. It is an ideal choice for designers looking for a reliable component to enhance power efficiency in their applications.

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