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NTD5406NT4G

Part No NTD5406NT4G
Manufacturer ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description Trans MOSFET N-CH 40V 12.2A 3-Pin(2+Tab) DPAK T/R / MOSFET N-CH 40V 70A DPAK
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 40V
Continuous Drain Current at 25°C 12.2A (Ta), 70A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 5V, 10V
Gate-Source Threshold Voltage 3.5V @ 250μA
Max Gate Charge 45nC @ 10V
Max Input Capacitance 2500pF @ 32V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 3W (Ta), 100W (Tc)
Maximum Rds On at Id,Vgs 10 mOhm @ 30A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package DPAK
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 060624-NTD5406NT4G
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Balance
Family Name NTD5406N
Introduction Date October 07, 2005
ECCN EAR99
Country of Origin Malaysia
Halogen Free Compliant
Estimated EOL Date Obsolete / End of life
Ultra Librarian 3D Model Ultra Librarian NTD5406NT4G CAD Model

Description

ON Semiconductor NTD5406NT4G - High-Performance Power MOSFET

The NTD5406NT4G is a state-of-the-art Power MOSFET brought to you by ON Semiconductor, a leading name in the industry known for its innovative and reliable semiconductor solutions. This particular MOSFET is designed to meet the demanding requirements of modern electronic circuits, offering high efficiency, low on-resistance, and fast switching performance.

Constructed with advanced trench technology, the NTD5406NT4G boasts an impressive R<sub>DS(on) that ensures minimal power loss and heat generation, making it an ideal choice for power management applications. This feature, combined with its robust and compact package, makes it highly suitable for space-constrained environments where thermal management is critical.

With a continuous drain current of 33A and a power dissipation of 48W, the NTD5406NT4G is capable of handling high currents and power levels, maintaining stability and reliability even under strenuous conditions. Its threshold voltage is optimized for logic-level drive, which facilitates its use in low-voltage applications and simplifies the design of drive circuits.

The device comes in a Pb-free, RoHS-compliant, and halogen-free package, which not only ensures compliance with current environmental regulations but also demonstrates ON Semiconductor's commitment to sustainability. The NTD5406NT4G is available in a compact and surface-mountable DPAK (TO-252) package, which allows for efficient PCB layout and is easy to integrate into various circuit designs.

Applications for the NTD5406NT4G are diverse and include DC/DC converters, power supplies, motor drives, and other power-intensive applications where efficiency and reliability are paramount. Its fast switching characteristics also make it well-suited for high-frequency circuits, further expanding its usability across different sectors.

In summary, the ON Semiconductor NTD5406NT4G Power MOSFET is a high-performance component designed for efficiency and reliability. With its advanced features and environmentally friendly design, it stands out as an excellent choice for engineers and designers looking to enhance their power management systems.

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