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NTD5407NT4G

Part No NTD5407NT4G
Manufacturer ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 40V 38A DPAK
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 40V
Continuous Drain Current at 25°C 7.6A (Ta), 38A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 5V, 10V
Gate-Source Threshold Voltage 3.5V @ 250μA
Max Gate Charge 20nC @ 10V
Max Input Capacitance 1000pF @ 32V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 2.9W (Ta), 75W (Tc)
Maximum Rds On at Id,Vgs 26 mOhm @ 20A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package DPAK
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 209343-NTD5407NT4G
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian NTD5407NT4G CAD Model

Description

ON Semiconductor NTD5407NT4G - Power MOSFET

The NTD5407NT4G is a high-performance Power MOSFET designed and manufactured by ON Semiconductor, a trusted leader in innovative energy-efficient semiconductor solutions. This MOSFET is a part of ON Semiconductor's extensive range of power management devices, designed to cater to a wide array of applications requiring efficient power conversion and control.

With its advanced technology, the NTD5407NT4G offers excellent on-state resistance (RDS(on)) and low gate charge (Qg), which translates to reduced conduction and switching losses. This feature makes it particularly suitable for high-efficiency power applications. The MOSFET operates as an N-channel device with a drain-to-source voltage (VDSS) of 60V and a continuous drain current (ID) rating of 42A, ensuring robust performance for a wide range of power requirements.

The NTD5407NT4G is housed in a compact and durable surface-mount package, specifically the DPAK (TO-252), which allows for efficient thermal management and space-saving on the PCB. This packaging also enables easier installation in various applications, including but not limited to, power supply circuits, motor drives, lighting systems, and automotive applications.

ON Semiconductor has designed the NTD5407NT4G with several protective features to ensure reliability and longevity. These include a maximum junction temperature of 175°C, which allows for operation in high-temperature environments, and built-in diode protection for safe handling of inductive loads.

For designers and engineers looking for a high-efficiency solution for their power control needs, the NTD5407NT4G offers the performance, reliability, and quality that ON Semiconductor is known for. Its advanced features and robust design make it an excellent choice for a wide range of applications, ensuring both energy savings and long-term durability.

In summary, the NTD5407NT4G Power MOSFET from ON Semiconductor is a versatile and efficient component that provides exceptional performance in power management tasks, making it an essential part of modern electronic systems.

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Pricing & Ordering

Quantity Unit Price Ext. Price
45+ $1.1730 $52.7850
105+ $0.9625 $101.0625
165+ $0.9324 $153.8460
225+ $0.9023 $203.0175
290+ $0.8722 $252.9380
385+ $0.7820 $301.0700
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 42,050 pieces
MOQ: 45 pcs
Order Increment : 1 pcs
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