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NTD5865NT4G

Part No NTD5865NT4G
Manufacturer ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 60V 43A DPAK
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 60V
Continuous Drain Current at 25°C 43A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 23nC @ 10V
Max Input Capacitance 1261pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 71W (Tc)
Maximum Rds On at Id,Vgs 18 mOhm @ 20A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package DPAK
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 1083844-NTD5865NT4G
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian NTD5865NT4G CAD Model

Description

ON Semiconductor NTD5865NT4G MOSFET

The NTD5865NT4G from ON Semiconductor is a high-performance, Power MOSFET designed to deliver efficient power management and conversion for a wide range of applications. This N-channel MOSFET is a testament to ON Semiconductor's commitment to providing energy-efficient solutions to modern electronic challenges.

With its low on-state resistance (RDS(on)), the NTD5865NT4G offers minimal conduction losses, making it an ideal choice for high-efficiency power supplies, DC-DC converters, and motor control circuits. The device is capable of handling continuous drain currents up to 60A, which makes it suitable for high-current applications without compromising performance.

The NTD5865NT4G operates over a wide range of temperatures, from -55°C to 175°C, ensuring reliability and stability even under extreme conditions. This feature is particularly important for applications in harsh environments where temperature fluctuations are common.

Another remarkable feature of this MOSFET is its low gate charge (Qg), which translates to faster switching speeds. This is crucial for applications requiring high-frequency operation, as it helps in reducing switching losses and improving overall efficiency.

ON Semiconductor has packaged the NTD5865NT4G in a compact and robust DPAK (TO-252) package, which is not only space-saving but also offers excellent thermal performance. The surface-mount package is designed for easy integration into various circuit designs, providing designers with flexibility and convenience in PCB layout.

The NTD5865NT4G also incorporates advanced protection features, such as avalanche energy rating and a maximum threshold voltage of 4V, which help in safeguarding the device and the circuits from unexpected voltage spikes or other electrical anomalies.

In summary, the NTD5865NT4G MOSFET by ON Semiconductor is a powerful and versatile component that brings together high current capability, low on-resistance, fast switching, and thermal efficiency, making it an excellent choice for designers looking to optimize their power management systems.

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Pricing & Ordering

Quantity Unit Price Ext. Price
225+ $0.2573 $57.8925
550+ $0.2113 $116.2150
850+ $0.2046 $173.9100
1,170+ $0.1980 $231.6600
1,510+ $0.1914 $289.0140
2,020+ $0.1716 $346.6320
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 2,000 pieces
MOQ: 225 pcs
Order Increment : 1 pcs
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