EN
  • EN
  • DE

NTD60N02R-35G

Part No NTD60N02R-35G
Manufacturer ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 25V 8.5A/32A IPAK  /  N-Channel 25 V 8.5A (Ta), 32A (Tc) 1.25W (Ta), 58W (Tc) Through Hole I-Pak
Datasheet
Sample
Rohs State Need to verify
ECAD Module
Need Help

Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr onsemi
Package Tube
Product Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 25 V
Current - Continuous Drain (Id) @ 25°C 8.5A (Ta), 32A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 10.5mOhm @ 20A, 10V
Vgs(th) (Max) @ Id 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 14 nC @ 4.5 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 1330 pF @ 20 V
Power Dissipation (Max) 1.25W (Ta), 58W (Tc)
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package I-PAK
Package / Case TO-251-3 Stub Leads, IPak
Base Product Number NTD60
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Other Names ONSONSNTD60N02R-35G,2156-NTD60N02R-35G-ON
Standard Package 75
Win Source Part Number 1081961-NTD60N02R-35G
Ultra Librarian 3D Model Ultra Librarian NTD60N02R-35G CAD Model

Description

Overview of ON Semiconductor NTD60N02R-35G

The NTD60N02R-35G is a robust N-channel Power MOSFET designed and manufactured by ON Semiconductor, a leader in energy-efficient innovations. This power MOSFET is engineered to deliver high performance for a wide range of applications, making it a versatile and essential component in modern electronic systems.

Key Features

  • High Drain-Source Voltage: With a V<sub>DS of 24V, the NTD60N02R-35G can handle significant voltage levels, making it suitable for various power applications.
  • High Continuous Drain Current: It offers a high continuous drain current of 60A, ensuring that it can support applications requiring high current capability.
  • Low On-Resistance: The device features a low R<sub>DS(on) of 2.5 mΩ at V<sub>GS = 10 V, which translates to reduced power loss and improved efficiency in operation.
  • Fast Switching Speed: Fast switching capabilities are a hallmark of this MOSFET, enabling efficient power conversion and reduced switching losses.
  • Enhanced Thermal Performance: The NTD60N02R-35G is encapsulated in a TO-252 (DPAK) package, which provides excellent thermal performance and aids in maintaining device longevity.

Applications

The NTD60N02R-35G is designed for a variety of applications, including:

  • DC to DC converters
  • Power management systems
  • Motor drives
  • Battery powered circuits
  • Switching regulators
  • Load switches

Reliability and Quality

ON Semiconductor's commitment to quality ensures that the NTD60N02R-35G meets the highest standards of reliability and performance. The device is subjected to rigorous testing and validation procedures, ensuring that it performs to specifications under varying conditions.

Conclusion

The NTD60N02R-35G from ON Semiconductor is an exceptional N-channel Power MOSFET that offers a blend of high performance, efficiency, and reliability. With its high current handling capability, low on-resistance, and fast switching speed, it stands as a top choice for designers looking to optimize their power management solutions. Its robust design and thermal efficiency make it suitable for a broad range of industrial and consumer applications, solidifying its place as a go-to component in power electronics.

You May Also Be Interested in

Infineon Technologies
OptiMOSTM Power-MOSFET
Lowest to $0.7540
Hitachi, Ltd
Silicon P Channel MOS FET Low FrequencyPower Switching
Need more? Email Us
Hitachi, Ltd
Silicon P Channel MOS FET High Speed Switching
Lowest to $1.4264
Supertex, Inc
P-Channel Enhancement-Mode Vertical DMOS FETs
Lowest to $0.5971
Fairchild/ON Semiconductor
P-Channel 2.5V Specified PowerTrench MOSFET
Lowest to $0.1285
Rohm Semiconductor
4V Drive Nch MOS FET
Lowest to $0.0439
NEC
MOS FIELD EFFECT TRANSISTOR
Need more? Email Us
SANYO Semiconductor (U.S.A) Corporation
Ultrahigh-Speed Switching Applications
Lowest to $27.0651
NXP / Nexperia
TrenchMOS logic level FET
Lowest to $18.5481

Top Sellers

Nexperia USA Inc.
DIODE GEN PURP 100V 250MA SOD523
Lowest to $0.0214
Bosch Sensortec
SENSOR FLIPCORE/HALL SPI 12WLCSP / Geomagnetic Sensor
Lowest to $0.7841
FTDI, Future Technology Devices International Ltd
IC USB SERIAL BASIC UART 16QFN
Lowest to $5.7023
Texas Instruments
DARLINGTON TRANSISTOR ARRAY | TRANS 8NPN DARL 50V 0.5A 18SO
Lowest to $5.9399
FTDI, Future Technology Devices International Ltd
IC USB SERIAL BASIC UART 16SSOP
Lowest to $5.4647
Kemet
RELAY GEN PURPOSE DPDT 2A 5V
Lowest to $0.9677
Texas Instruments
IC BRIDGE DRIVER PAR 36HSSOP
Lowest to $19.3374
FTDI, Future Technology Devices International Ltd
IC USB FS SERIAL UART 28-SSOP
Lowest to $4.7519
Bosch Sensortec
SENSOR PRESSURE HUMIDITY TEMP
Lowest to $3.9204
Peregrine Semiconductor
RF ATTENUATOR 31.5DB 50OHM 20QFN
Lowest to $2.2891
Solomon
LCD Display Controller 128-Pin LQFP Tray
Lowest to $7.4300
TDK InvenSense
MOTION SENSOR / Accelerometer, Gyroscope, 6 Axis Sensor Output
Lowest to $17.3444
Nexperia USA Inc.
Counter Shift Registers 8-bit serial-in, serial or parallel-out shift register with output latches; 3 - state
Lowest to $0.1046
Texas Instruments
IC CTRLR HOT SWAP 48V 10-MSOP
Lowest to $3.5640
Texas Instruments
TRANS 8NPN DARL 50V 0.5A 18SO
Lowest to $5.2271
Availability: Check Availability & Quote
Notify Me When Available

Shipping Information

Shipped from HK warehouse
Expected Shipping Date Get an estimate

Contact Us

*
*
*

FRAUD PREVENTION REMINDERS

Recently, We have discovered that criminals falsely claimed to be WIN SOURCE to commit fraud. Please note that the only official website & email suffix are win-source.group, win-source.net, winsourcectl.com and winsourceelec.com

More details about fraud prevention
RFQ RFQ RFQ BOM BOM BOM API API API Sell Sell Sell your Excess