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NTD6416ANL-1G

Part No NTD6416ANL-1G
Manufacturer ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 100V 19A IPAK
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 100V
Continuous Drain Current at 25°C 19A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.2V @ 250μA
Max Gate Charge 40nC @ 10V
Max Input Capacitance 1000pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 71W (Tc)
Maximum Rds On at Id,Vgs 74 mOhm @ 19A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package I-Pak
Dimension TO-251-3 Short Leads, IPak, TO-251AA
Win Source Part Number 1083850-NTD6416ANL-1G
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian NTD6416ANL-1G CAD Model

Description

Introducing the NTD6416ANL-1G Power MOSFET from ON Semiconductor

The NTD6416ANL-1G is a cutting-edge Power MOSFET brought to you by ON Semiconductor, a trusted leader in energy-efficient innovations. This high-performance component is designed to meet the rigorous demands of modern electronic applications, offering an optimal combination of low on-resistance, high-speed switching, and robust thermal performance. The NTD6416ANL-1G is an ideal choice for a wide range of power management tasks, from automotive systems to complex industrial equipment.

Key Features

  • Low On-Resistance: Equipped with an extremely low on-resistance (R<sub>DS(on)), the NTD6416ANL-1G ensures efficient power usage and minimal voltage drop across the device, leading to better overall system efficiency.
  • High Current Capacity: This MOSFET can handle high levels of current, making it suitable for applications that demand robust power handling capabilities.
  • High-Speed Switching: Designed for high-speed switching applications, the NTD6416ANL-1G minimizes transition losses and enhances performance in high-frequency operations.
  • Enhanced Thermal Performance: The device features an optimized package that provides excellent thermal characteristics, ensuring reliability even under high-temperature conditions.
  • Gate Charge Optimization: The NTD6416ANL-1G features an optimized gate charge, which enables efficient switching performance and reduces power losses.

Applications

The versatile nature of the NTD6416ANL-1G MOSFET makes it suitable for a multitude of applications, including:

  • Power supply units
  • DC-DC converters
  • Motor drives
  • Automotive systems
  • Power management solutions
  • Switch mode power supplies (SMPS)

Quality and Reliability

ON Semiconductor is committed to delivering high-quality products. The NTD6416ANL-1G is produced with stringent quality control measures, ensuring that each component meets the company's high standards for reliability and performance. With ON Semiconductor's reputation for quality, you can integrate the NTD6416ANL-1G into your designs with confidence, knowing that it will contribute to the longevity and efficiency of your electronic systems.

For detailed specifications, application notes, and additional resources, please refer to the official ON Semiconductor documentation for the NTD6416ANL-1G Power MOSFET.

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Pricing & Ordering

Quantity Unit Price Ext. Price
45+ $1.1642 $52.3890
105+ $0.9553 $100.3065
165+ $0.9254 $152.6910
225+ $0.8956 $201.5100
290+ $0.8657 $251.0530
390+ $0.7762 $302.7180
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 3,110 pieces
MOQ: 45 pcs
Order Increment : 1 pcs
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